1,3-双(3-溴苯氧基)苯 | 32220-74-9

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 中文名称: 1,3-双(3-溴苯氧基)苯
• 英文名称: 1,3-bis-(m-bromophenoxy)-benzene
• 英文别名: 1,3-bis(3-bromophenoxy)benzene；1,3-bis-(m-bromophenoxy)benzene；m-Bis-(m-brom-phenoxy)-benzol
• CAS: 32220-74-9
• 化学式: C₁₈H₁₂Br₂O₂
• 分子量: 420.1
• InChiKey: HONAMWKAGCGSSQ-UHFFFAOYSA-N

物化性质

• 沸点：
  453.8±40.0 °C(Predicted)
• 密度：
  1.597±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  6.4
• 重原子数：
  22
• 可旋转键数：
  4
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  18.5
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  1,3-双(3-溴苯氧基)苯 在 tris-(dibenzylideneacetone)dipalladium(0) 、 正丁基锂 、 三叔丁基膦 、 sodium t-butanolate 作用下， 以 正己烷 、 甲苯 为溶剂， 反应 10.0h， 生成
  参考文献：
  名称：

  含氧硼烷类有机化合物、混合物、组合物及有机电子器件

  摘要：

  本发明涉及一种含氧硼烷类有机化合物、混合物、组合物及有机电子器件。该含氧硼烷类有机化合物具有式(I‑1)或(I‑2)所示结构，通过给电子单元(X)和吸电子单元(氧杂硼烷衍生物，Y)以首尾相接的方式构建的，这样得到的环状结构在空间上会有比较大的扭转角，从而使得前线分子轨道在空间上有比较好的分离。因此，分子内部的电荷转移比较微弱，电子交换能比较低，ΔEst比较小，约为2J，三重激发态的能量易于反向系间窜越到单重激发态，因而能有效地提高发光效率。

  公开号：

  CN114075230A

文献信息

• Composition for film formation and material for insulating film formation
  申请人：JSR CORPORATION

  公开号：US20020172652A1

  公开（公告）日：2002-11-21

  A composition for film formation capable of forming a coating film excellent in low dielectric constant characteristics, cracking resistance, modulus of elasticity, and adhesion to substrates and useful as an interlayer insulating film material in semiconductor devices, etc. The composition for film formation contains (A) at least one member selected from an aromatic polyarylene and an aromatic poly (arylene ether), (B) a polyvinylsiloxane, and (C) an organic solvent.

  一种用于制备薄膜的组合物，能够形成具有低介电常数特性、抗开裂性、弹性模量和对基底的附着力优异的涂层膜，并可用作半导体器件中的层间绝缘膜材料等。该制膜组合物包含（A）至少一种选自芳香族聚芳烃和芳香族聚（芳烃醚）的成员，（B）聚乙烯基硅氧烷和（C）有机溶剂。
• Thermosetting arylether compounds and their synthesis
  申请人：The United States of America as represented by the Secretary of the Air

  公开号：US04547592A1

  公开（公告）日：1985-10-15

  Arylether compounds containing terminal phenylethynyl groups are provided. Also provided is a process for producing these compounds. The following compounds are claimed; 4,4'-bis(3-phenylethynyl-phenoxy) diphenylsulfone; 2,2-bis[([([3-phenoxy]-3-phenoxy)-3-phenylethynyl]-3-phenoxy)-4-phenyl]-pr opane and 2,2-bis[([([3-phenoxy]-3-phenoxy)-3-phenyl ethynyl]-3-phenoxy)-4-phenyl]-hexafluoropropane.

  提供了含有末端苯乙炔基的芳基醚化合物。还提供了制备这些化合物的方法。以下化合物被声明：4,4'-双(3-苯乙炔基苯氧基)二苯基砜；2,2-双[([([3-苯氧基]-3-苯氧基)-3-苯乙炔基]-3-苯氧基)-4-苯基]-丙烷和2,2-双[([([3-苯氧基]-3-苯氧基)-3-苯乙炔基]-3-苯氧基)-4-苯基]-六氟丙烷。
• LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM
  申请人：JSR Corporation

  公开号：EP1679184A1

  公开（公告）日：2006-07-12

  A laminate having a low relative dielectric constant and exhibiting excellent adhesion, a method of forming the laminate, an insulating film, a semiconductor device, and a film-forming composition are provided. A laminate according to the invention includes: a first silica-based film; a second silica-based film; and an organic film, wherein the second silica-based film includes a monovalent organic group containing a carbon-carbon double bond or a carbon-carbon triple bond. A method of forming a laminate according to the invention includes: forming a first coating for a first silica-based film on a substrate; forming a second coating for a second silica-based film on the first coating, the second coating including a monovalent organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; forming a third coating for an organic film on the second coating; and curing a multilayer film including the first to third coatings.

  本发明提供了一种具有低相对介电常数并表现出优异附着力的层压板、一种形成该层压板的方法、一种绝缘膜、一种半导体器件和一种成膜组合物。 根据本发明的层压板包括：第一硅基薄膜；第二硅基薄膜；以及有机薄膜，其中第二硅基薄膜包括含有碳碳双键或碳碳三键的一价有机基团。 根据本发明形成层压板的方法包括：在基底上形成第一硅基薄膜的第一涂层；在第一涂层上形成第二硅基薄膜的第二涂层，第二涂层包括含有碳碳双键或碳碳三键的一价有机基团；在第二涂层上形成有机薄膜的第三涂层；以及固化包括第一至第三涂层的多层薄膜。
• INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM
  申请人：JSR Corporation

  公开号：EP1696478A1

  公开（公告）日：2006-08-30

  The invention provides a method of forming an insulating film which exhibits resistance against processing such as RIE used when forming a dual-damascene structure while maintaining a low relative dielectric constant of a polysiloxane insulating film. A polysiloxane insulating film is formed on a substrate by hydrolysis and condensation of a silane compound. A solution obtained by dissolving a polycarbosilane compound shown by the following general formula in a solvent is applied to the polysiloxane insulating film, and the resulting coating is heated to form a polycarbosilane insulating film. An organic insulating film is then formed on the polycarbosilane insulating film.

  本发明提供了一种形成绝缘膜的方法，这种绝缘膜既能抵抗在形成双大马士革结构时使用的 RIE 等加工，又能保持聚硅氧烷绝缘膜较低的相对介电常数。聚硅氧烷绝缘膜是通过硅烷化合物的水解和缩合作用在基材上形成的。将下表通式所示的聚碳硅烷化合物溶解在溶剂中得到的溶液涂抹在聚硅氧烷绝缘膜上，然后加热涂层，形成聚碳硅烷绝缘膜。 然后在聚碳硅烷绝缘膜上形成有机绝缘膜。
• Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film
  申请人：JSR CORPORATION

  公开号：US20020161173A1

  公开（公告）日：2002-10-31

  a composition for film formation which can be cured in a short time period and give a film having a low dielectric constant and excellent in heat resistance, adhesion and cracking resistance, a polymer for use in the composition and a process for producing the polymer. The composition prepared by dissolving the polymer having specific repeating units in a solvent has excellent film-forming properties. The polymer has repeating units represented by the following general formula (1): 1 wherein Z and Y are as defined hereinabove.

  一种可在短时间内固化并能形成具有低介电常数和优异耐热性、粘附性和抗裂性的薄膜的成膜组合物、一种用于该组合物的聚合物以及一种生产该聚合物的工艺。将具有特定重复单元的聚合物溶解在溶剂中制备的组合物具有优异的成膜性能。该聚合物具有由以下通式（1）表示的重复单元： 1 其中 Z 和 Y 如上文所定义。