13H-二苯并[b,i]吩噻嗪 | 258-78-6

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 苯并噻嗪类
• 中文名称: 13H-二苯并[b,i]吩噻嗪
• 英文名称: 13H-bisbenzo[b,i]phenothiazine
• 英文别名: Dibenzophenothiazin；13H-dibenzo[b,i]phenothiazine；13H-Dibenzo[b,i]phenothiazin；13H-dibenzo[b,i]phenothiazine；2-thia-13-azapentacyclo[12.8.0.03,12.05,10.016,21]docosa-1(22),3,5,7,9,11,14,16,18,20-decaene
• CAS: 258-78-6
• 化学式: C₂₀H₁₃NS
• 分子量: 299.396
• InChiKey: YWQCUOPMWQPZTR-UHFFFAOYSA-N

物化性质

• 沸点：
  553.5±20.0 °C(Predicted)
• 密度：
  1.302±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  6.1
• 重原子数：
  22
• 可旋转键数：
  0
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  37.3
• 氢给体数：
  1
• 氢受体数：
  2

安全信息

• 海关编码：
  2934300000

反应信息

• 作为反应物：
  描述：

  13H-二苯并[b,i]吩噻嗪 、 p-bromophenyldimesitylborane 在 tris-(dibenzylideneacetone)dipalladium(0) 作用下， 以 甲苯 为溶剂， 以80 %的产率得到
  参考文献：
  名称：

  CN115772139

  摘要：

  公开号：
• 作为产物：
  描述：

  2,2-二萘胺 在 碘 、 sulfur 作用下， 以 邻二氯苯 为溶剂， 以70 %的产率得到13H-二苯并[b,i]吩噻嗪
  参考文献：
  名称：

  CN115772139

  摘要：

  公开号：

文献信息

• 一种甲基丙烯酸羟乙酯的连续精制工艺
  申请人：万华化学集团股份有限公司

  公开号：CN118290263A

  公开（公告）日：2024-07-05

  本发明涉及一种甲基丙烯酸羟乙酯的连续精制工艺。该精制方法具体包括如下步骤：使用减压精馏塔脱除待分离液的甲基丙烯酸一缩二乙二醇酯和重组分，精馏塔塔顶喷淋高沸点阻聚剂，向塔顶所得甲基丙烯酸羟乙酯轻组分中加入萃取剂脱除其中的乙二醇二甲基丙烯酸酯，通过气提脱除萃余相的萃取剂，得到甲基丙烯酸羟乙酯产品。本发明能够实现对待分离液中甲基丙烯酸羟乙酯进行连续精制的操作，进一步回收其中的甲基丙烯酸羟乙酯，减少待分离液作为废液的处理量，整套分离工艺无有机废水，绿色环保，操作劳动强度小，得到的产品纯度高，可应用于隐形眼镜等高端应用领域。
• COMPOSITION FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND POLYMER
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20200387071A1

  公开（公告）日：2020-12-10

  A composition for forming an organic film contains a polymer having a repeating unit shown by formula (1A) as a partial structure, and an organic solvent, where AR 1 and AR 2 represent a benzene ring or naphthalene ring optionally with a substituent; W 1 represents any in formula (1B), and the polymer optionally contains two or more kinds of W 1 ; W 2 represents a divalent organic group having 1 to 80 carbon atoms; R 1 represents a monovalent organic group having 1 to 10 carbon atoms and an unsaturated bond; and R 2 represents a monovalent organic group having 6 to 20 carbon atoms and one or more aromatic rings. This invention provides: an organic film composition which enables excellent film formability, high etching resistance, and excellent twisting resistance without impairing the resin-derived carbon content, and which contains less outgassing-causing sublimation component; a patterning process using the composition; and a polymer suitable for the composition.
• COMPOSITION FOR FORMING ORGANIC FILM, SUBSTRATE FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND POLYMER
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20210003920A1

  公开（公告）日：2021-01-07

  A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1) as a repeating unit, and an organic solvent. Each of AR1 and AR2 represents a benzene ring or naphthalene ring which optionally have a substituent; W 1 represents a particular partial structure having a triple bond, and the polymer optionally contains two or more kinds of W 1 ; and W 2 represents a divalent organic group having 6 to 80 carbon atoms and at least one aromatic ring. This invention provides: a polymer curable even under film formation conditions in an inert gas and capable of forming an organic film which has not only excellent heat resistance and properties of filling and planarizing a pattern formed in a substrate, but also favorable film formability onto a substrate with less sublimation product; and a composition for forming an organic film, containing the polymer.
• COATING-TYPE COMPOSITION FOR FORMING ORGANIC FILM, PATTERNING PROCESS, POLYMER, AND METHOD FOR MANUFACTURING POLYMER
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20210278766A1

  公开（公告）日：2021-09-09

  The present invention provides a. coating-type composition for forming an. organic film containing: a polymer having a structure shown by the following general formula (1) as a partial structure; and an organic solvent, where in the formula (1), ring structures Ar1 and Ar2 represent a benzene rive or a naphthalene ring optionally having a substituent, and W 1 represents an aryl croup having 6 to 30 carbon atoms and optionally having a substituent. This provides a coating-type composition for forming an organic film that can. form an organic film having high pattern-curving resistance and high dry-etching resistance, the composition being excellent in solvent solubility and having a low generation of defects.