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2,2',3,3'-四氢-3,3,3',3'-四甲基-1,1'-螺双[1H-茚]-4,4',5,5',6,6'-六醇 | 65192-09-8

中文名称
2,2',3,3'-四氢-3,3,3',3'-四甲基-1,1'-螺双[1H-茚]-4,4',5,5',6,6'-六醇
中文别名
——
英文名称
1,1'-Spirobi(1H-indene)-4,4',5,5',6,6'-hexol, 2,2',3,3'-tetrahydro-3,3,3',3'-tetramethyl-
英文别名
3,3,3',3'-tetramethyl-1,1'-spirobi[2H-indene]-4,4',5,5',6,6'-hexol
2,2',3,3'-四氢-3,3,3',3'-四甲基-1,1'-螺双[1H-茚]-4,4',5,5',6,6'-六醇化学式
CAS
65192-09-8
化学式
C21H24O6
mdl
——
分子量
372.4
InChiKey
LFMCTLLZHYCABW-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    4.4
  • 重原子数:
    27
  • 可旋转键数:
    0
  • 环数:
    4.0
  • sp3杂化的碳原子比例:
    0.43
  • 拓扑面积:
    121
  • 氢给体数:
    6
  • 氢受体数:
    6

文献信息

  • Positive type photoresist composition
    申请人:FUJI PHOTO FILM CO., LTD.
    公开号:EP0445680A2
    公开(公告)日:1991-09-11
    A positive type photoresist composition which is superior in the prevention of pattern break and scumming during development, comprising an alkali-soluble novolak resin and a 1,2-quinonediazide compound, wherein said novolak resin is a condensate of a mixture of m-cresol and p-cresol with at least one of formaldehyde, formaldehyde polymer and formaldehyde precursor and wherein the relationship between X = A/(A+B+C) and the content of m-cresol in said novolak resin falls within the shaded part (including the straight lines surrounding this part) in Figure 1, said A representing an integrated value of peak area between 23.0 ppm and 31.0 ppm , B representing an integrated value of peak area between 31.0 ppm and 34.0 ppm and C representing an integrated value of peak area between 34.0 ppm and 37.0 ppm in a ¹³C-NMR spectrum of a dimethyl sulfoxide-d₆ solution of said novolak resin.
    一种正型光刻胶组合物,在显影过程中可有效防止图案破裂和浮渣,该组合物由碱溶性酚醛树脂和 1,2-醌噻嗪化合物组成,其中所述酚醛树脂是间甲酚和对甲酚与甲醛、甲醛聚合物和甲醛前体中至少一种的混合物的缩合物、其中,X = A/(A+B+C) 与间甲酚在所述酚醛树脂中的含量之间的关系在图 1 中的阴影部分(包括围绕该部分的直线)内,所述 A 代表峰面积的综合值,介于 23.在所述酚醛树脂的二甲亚砜-d₆溶液的¹³C-NMR 光谱中,A 代表峰面积的综合值在 23.0 ppm 和 31.0 ppm 之间,B 代表峰面积的综合值在 31.0 ppm 和 34.0 ppm 之间,C 代表峰面积的综合值在 34.0 ppm 和 37.0 ppm 之间。
  • Photoresist composition and etching method
    申请人:FUJI PHOTO FILM CO., LTD.
    公开号:EP0540032A1
    公开(公告)日:1993-05-05
    A positive type or negative type photoresist composition for fine processing having excellent resolution, sensitivity, adhesive-ness and developability comprising: (a) an alkali soluble resin or a resin having anti-alkali dissolution groups in the molecules thereof, (b) a light-sensitive compound, and (c) at least one organic compound selected from the group consisting of organic phosphorus acid compounds and esters thereof in an amount of 0.001 to 10% by weight based on a weight of the resin. In addtion, the present invention is directed to an etching method utilizing the positive type or negative type photoresist composition.
    一种用于精细加工的正型或负型光刻胶组合物,具有优异的分辨率、灵敏度、粘合性和显影性,包括 (a) 碱溶性树脂或在其分子中含有抗碱溶解基团的树脂、 (b) 一种光敏化合物,和 (c) 至少一种选自有机磷酸化合物及其酯类的有机化合物,其含量为树脂重量的 0.001 至 10%。此外,本发明还涉及一种利用正型或负型光刻胶组合物的蚀刻方法。
  • Process for synthesizing quinonediazide ester and positive working photoresist containing the same
    申请人:FUJI PHOTO FILM CO., LTD.
    公开号:EP0706089A2
    公开(公告)日:1996-04-10
    A process for synthesizing a quinonediazide ester is disclosed in which the esterification reaction of a polyhydroxy compound with 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonyl chloride is carried out in the presence of a base catalyst comprising a basic compound represented by formula (I) or (II): wherein R₁ to R₁₅ are defined in the disclosure. A positive working photoresist containing the ester is also disclosed. The process is capable of highly selectively yielding the desired photosensitive material containing specific unreacted hydroxyl group(s). The photoresist has high resolving power with reduced film thickness dependence of the resolving power, is less apt to leave a development residue, and has excellent storage stability for prolonged period of time.
    本发明公开了一种合成喹酮噻嗪酯的工艺,在该工艺中,多羟基化合物与 1,2-萘醌噻嗪-5-(和/或-4-)磺酰氯的酯化反应是在碱催化剂存在下进行的,碱催化剂包括由式 (I) 或 (II) 所代表的碱化合物: 其中 R₁至 R₁₅的定义见公开内容。此外,还公开了一种含有该酯的正工作光刻胶。该工艺能够高选择性地得到所需的光敏材料,其中含有特定的未反应羟基。这种光刻胶具有很高的分辨力,同时降低了膜厚度对分辨力的依赖性,不易留下显影残留物,并且在长时间储存时具有极佳的稳定性。
  • Method of synthesizing polyphenol compound and positive working photoresist composition comprising polyphenol compound
    申请人:FUJI PHOTO FILM CO., LTD.
    公开号:EP0745575A1
    公开(公告)日:1996-12-04
    Provided are a method of synthesizing a highly pure polyphenol compound, which comprises (i) introducing at least one -CHRNR'R'' group onto aromatic ring(s) of a phenol compound having from one to ten aromatic ring(s), wherein R represents a hydrogen atom, an alkyl group which may contain a hetero atom, a cycloalkyl group which may contain a hetero atom, an aralkyl group which may contain a hetero atom, or an aryl group, and R' and R'', which may be the same or different, each represents an alkyl group which may contain a hetero atom, a cycloalkyl group which may contain a hetero atom, an aralkyl group which may contain a hetero atom, or an aryl group, and R' and R'' may combine with each other to form a ring, (ii) converting the -CHRNR'R'' group into a -CHRA group via one to three steps, wherein A represents a hydroxyl group, an alkoxy group, an acyloxy group, a halogen atom, a quaternary ammonium salt or a sulfonyloxy group, and (iii) condensing the thus converted phenol compound and a phenol compound, and a positive working photoresist composition using the polyphenol compound obtained by the aforementioned method.
    本发明提供了一种合成高纯度多酚化合物的方法,该方法包括(i)在具有一至十个芳香环的苯酚化合物的芳香环上引入至少一个-CHRNR'R''基团,其中 R 代表氢原子、可含有杂原子的烷基、可含有杂原子的环烷基、可含有杂原子的芳烷基或芳基、可含有杂原子的环烷基、可含有杂原子的芳烷基或芳基,R'和 R''可以相同或不同,各自代表可含有杂原子的烷基、可含有杂原子的环烷基、可含有杂原子的芳烷基、可含有杂原子的芳烷基、可含有杂原子的芳烷基、可含有杂原子的芳烷基、可含有杂原子的芳烷基、可含有杂原子的芳烷基、可含有杂原子的芳烷基、可含有杂原子的芳烷基、(ii) 通过一至三个步骤将 -CHRNR'R'' 基团转化为 -CHRA 基团,其中 A 代表羟基、烷氧基、酰氧基、环烷基或芳基、烷氧基、酰氧基、卤素原子、季铵盐或磺酰氧基,以及 (iii) 将由此转化的苯酚化合物和苯酚化合物缩合,并使用通过上述方法获得的多酚化合物制备正性工作光刻胶组合物。
  • NOVOLAK RESIN MIXTURES AND PHOTOSENSITIVE COMPOSITIONS COMPRISING THE SAME
    申请人:——
    公开号:US20030207195A1
    公开(公告)日:2003-11-06
    Disclosed is an alkali-soluble, film-forming novolak resin mixture containing at least two novolak resins, each novolak resin containing the addition-condensation reaction product of at least one phenolic compound with at least one aldehyde source, wherein the phenolic compound for first novolak resin contains 90-100 mole % of meta-cresol, and the phenolic compound for the second novolak resin contains less than 50 mole % of meta-cresol. Also disclosed is a photosensitive composition, containing an admixture of: a) the above-mentioned novolak resin mixture; b) at least one o-quinone photoactive compound; and c) at least one photoresist solvent. Also disclosed is a method for producing a microelectronic device by forming an image on a substrate, which involves: a) providing the above-mentioned photosensitive composition; b) thereafter, coating a suitable substrate with the photoresist composition from step a); c) thereafter, heat treating the coated substrate until substantially all of the solvent is removed; image-wise exposing the coated substrate; and then removing the imagewise exposed or, alternatively, the unexposed areas of the coated substrate with a suitable developer.
    公开了一种碱溶性成膜酚醛树脂混合物,其中至少含有两种酚醛树脂,每种酚醛树脂含有至少一种酚类化合物与至少一种醛源的加成缩合反应产物,其中第一种酚醛树脂的酚类化合物含有90-100摩尔%的偏甲酚,第二种酚醛树脂的酚类化合物含有少于50摩尔%的偏甲酚。本发明还公开了一种光敏组合物,该组合物含有以下混合物:a) 上述酚醛树脂混合物;b) 至少一种邻醌光活性化合物;c) 至少一种光致抗蚀剂溶剂。还公开了一种通过在基底上形成图像来生产微电子器件的方法,该方法包括:a) 提供上述光敏组合物;b) 然后,用步骤 a) 中的光刻胶组合物涂覆合适的基底;c) 然后,对涂覆的基底进行热处理,直到基本上去除所有溶剂;对涂覆的基底进行图像曝光;然后用合适的显影剂去除涂覆基底的图像曝光区或未曝光区。
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