There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R1aR2bSi(R3)4−(a+b). A resist underlayer film obtained by applying the composition as claimed in any one of claims 1 to 14 onto a semiconductor substrate and by baking the composition.
提供一种用于光刻的抗蚀底层膜形成组合物,用于形成可用作硬掩膜或底部抗反射涂层的抗蚀底层膜,或者不与光刻胶混合且具有比光刻胶更高的干法刻蚀速率的抗蚀底层膜。该组合物包括具有onium基团的
硅烷化合物,其中具有onium基团的
硅烷化合物是一种可
水解的有机
硅烷,在其分子中具有onium基团、其
水解产物或其
水解缩合产物。该组合物用作光刻的抗蚀底层膜形成组合物。该组合物包括具有onium基团的
硅烷化合物和不具有onium基团的
硅烷化合物,其中具有onium基团的
硅烷化合物在整个
硅烷化合物中的比例小于1%摩尔,例如0.01至0.95%摩尔。可
水解的有机
硅烷可以是公式的化合物:R1aR2bSi(R3)4-(a+b)。通过将所述组合物按权利要求1至14中的任一项涂覆到半导体基片上并烘烤所得到的抗蚀底层膜。