CH2=CHOCO(4-CF3C6H4) | 125610-53-9

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: CH2=CHOCO(4-CF3C6H4)
• 英文别名: Ethenyl 4-(trifluoromethyl)benzoate
• CAS: 125610-53-9
• 化学式: C₁₀H₇F₃O₂
• 分子量: 216.16
• InChiKey: OXSVEHMEQPIIQO-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.9
• 重原子数：
  15
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.1
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  5

反应信息

• 作为反应物：
  描述：

  CH2=CHOCO(4-CF3C6H4) 、 dibutylstannane 以 环己烷 为溶剂， 以>90的产率得到Bu2Sn{CH2CH2OCO(4-CF3C6H4)}2
  参考文献：
  名称：

  新型潜在有机锡催化剂：双[2-（酰氧基）烷基]二有机锡的热分解制备及机理

  摘要：

  DOI：

  10.1021/om00118a073

文献信息

• PHOTO-CROSSLINKABLE MATERIAL FOR ORGANIC THIN FILM TRANSISTOR INSULATING LAYER
  申请人：Sumitomo Chemical Co., Ltd

  公开号：EP2479791A1

  公开（公告）日：2012-07-25

  A problem of the present invention is to provide an organic thin film transistor insulating layer material which is capable of forming a cross-linked structure without conducting a treatment at higher temperature, and which enables an organic thin film transistor to have a small absolute value of threshold voltage (Vth) when it is used for the formation of a gate insulating layer. The means for solving the problem is an organic thin film transistor insulating layer material including a macromolecular compound that has a repeating unit having a group containing a fluorine atom and a repeating unit having a photodimerization-reactive group. Preferred examples of the group containing a fluorine atom include an aryl group in which a hydrogen atom has been substituted with a fluorine atom and an alkylaryl group in which a hydrogen atom has been substituted with a fluorine atom, and particularly a phenyl group in which a hydrogen atom has been substituted with a fluorine atom and an alkylphenyl group in which a hydrogen atom has been substituted with a fluorine atom. Preferred examples of the photodimerization-reactive group include an aryl groups in which a hydrogen atom has been substituted with a halomethyl group, and particularly a phenyl group in which a hydrogen atom has been substituted with a halomethyl group.

  本发明的一个问题是提供一种有机薄膜晶体管绝缘层材料，该材料能够在不进行高温处理的情况下形成交联结构，并使有机薄膜晶体管在用于形成栅极绝缘层时具有较小的阈值电压（Vth）绝对值。解决该问题的方法是一种有机薄膜晶体管绝缘层材料，包括一种大分子化合物，其重复单元具有一个含氟原子的基团和一个具有光二聚化反应基团的重复单元。含氟原子基团的优选实例包括氢原子被氟原子取代的芳基和氢原子被氟原子取代的烷芳基，特别是氢原子被氟原子取代的苯基和氢原子被氟原子取代的烷基苯基。光二聚化反应基团的优选实例包括氢原子被卤代甲基取代的芳基，特别是氢原子被卤代甲基取代的苯基。
• RESIN COMPOSITION FOR INSULATING LAYER
  申请人：Yahagi Isao

  公开号：US20120053287A1

  公开（公告）日：2012-03-01

  The problem to be solved is to provide a resin composition for an organic thin film transistor insulating layer which can cross-link without being subjected to a treatment at a high temperature for a long time to form an insulating layer excellent in surface adhesion property. The solving means is a resin composition for an organic thin film transistor insulating layer comprising (A) a macromolecular compound comprising a repeating unit having a photosensitive group s linked through a urea bond or a urethane bond, (B) a curing agent and (C) an organic solvent.