5-chloro-pent-3t-enoic acid | 80959-58-6

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: 5-chloro-pent-3t-enoic acid
• 英文别名: 5-Chlor-pent-3t-ensaeure；(E)-5-chloropent-3-enoic acid
• CAS: 80959-58-6
• 化学式: C₅H₇ClO₂
• 分子量: 134.562
• InChiKey: IYPOGXPFGLRPLU-OWOJBTEDSA-N

物化性质

• 沸点：
  247.5±20.0 °C(Predicted)
• 密度：
  1?+-.0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  0.8
• 重原子数：
  8
• 可旋转键数：
  3
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.4
• 拓扑面积：
  37.3
• 氢给体数：
  1
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  5-chloro-pent-3t-enoic acid 在 sodium hydroxide 作用下， 生成 2,4-戊二烯酸
  参考文献：
  名称：

  Chiusoli, Gazzetta Chimica Italiana, 1959, vol. 89, p. 1343,1346

  摘要：

  DOI：
• 作为产物：
  描述：

  5-chloro-pent-3t-enenitrile 在 盐酸 作用下， 生成 5-chloro-pent-3t-enoic acid
  参考文献：
  名称：

  Chiusoli, Gazzetta Chimica Italiana, 1959, vol. 89, p. 1343,1346

  摘要：

  DOI：

文献信息

• REGIOSELECTIVITY OF β-VINYL-β-PROPIOLACTONE TOWARD VARIOUS NUCLEOPHILES
  作者：Tamotsu Fujisawa、Toshio Sato、Masashi Takeuchi

  DOI：10.1246/cl.1982.71

  日期：1982.1.5

  Regioselectivity in the reaction of β-vinyl-β-propiolactone with various nucleophiles was found to depend on the hard and soft acid and base (HSAB) principle. A hard base such as methoxide ion attacked the acyl carbon exclusively, while the nucleophilic attack of soft bases such as iodide and dialkyl cuprate preferred the terminal vinyl carbon to the β-carbon.

  β-乙烯基-β-丙二酸内酯与各种亲核试剂的反应中，区域选择性被发现依赖于硬软酸碱（HSAB）原则。硬碱如甲氧基离子专门攻击酰基碳，而软碱如碘离子和双烷基铜盐的亲核攻击则更倾向于攻击末端乙烯基碳而非β碳。
• Method of polishing a silicon-containing dielectric
  申请人：Cabot Microelectronics Corporation

  公开号：US20040152309A1

  公开（公告）日：2004-08-05

  The invention is directed to a method of polishing a silicon-containing dielectric layer involving the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of about 4 to about 6. The polishing additive comprises a functional group having a pK a of about 4 to about 9 and is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof. The invention is further directed to the chemical-mechanical polishing system, wherein the inorganic abrasive is ceria.

  本发明涉及一种对含硅介电层进行抛光的方法，该方法涉及使用一种化学机械抛光系统，该系统包括(a)一种无机磨料、(b)一种抛光添加剂和(c)一种液体载体，其中抛光组合物的 pH 值约为 4 至 6。 a 为约 4 至约 9 的官能团，该官能团选自由芳胺、氨基醇、脂肪胺、杂环胺、羟肟酸、氨基羧酸、环状单羧酸、不饱和单羧酸、取代酚、磺酰胺、硫醇、其盐及其组合组成的组。本发明还涉及化学机械抛光系统，其中无机磨料为铈。
• Readily deinkable toners
  申请人：Carter W. Phillip

  公开号：US20060196848A1

  公开（公告）日：2006-09-07

  The invention is directed to a method of polishing a silicon-containing dielectric layer involving the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of about 4 to about 6. The polishing additive comprises a functional group having a pK a of about 3 to about 9 and is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof. The invention is further directed to the chemical-mechanical polishing system, wherein the inorganic abrasive is ceria.

  本发明涉及一种对含硅介电层进行抛光的方法，该方法涉及使用一种化学机械抛光系统，该系统包括(a)一种无机磨料、(b)一种抛光添加剂和(c)一种液体载体，其中抛光组合物的 pH 值约为 4 至 6。 a 为约 3 至约 9 的官能团，该官能团选自由芳胺、氨基醇、脂肪胺、杂环胺、羟肟酸、氨基羧酸、环状单羧酸、不饱和单羧酸、取代酚、磺酰胺、硫醇、其盐及其组合组成的组。本发明还涉及化学机械抛光系统，其中无机磨料为铈。
• Chiusoli, Chimica e l'Industria (Milan, Italy), 1959, vol. 41, p. 506,513
  作者：Chiusoli

  DOI：——

  日期：——
• FUJISAWA, TAMOTSU;SATO, TOSHIO;TAKEUCHI, MASASHI, CHEM. LETT., 1982, N 1, 71-74
  作者：FUJISAWA, TAMOTSU、SATO, TOSHIO、TAKEUCHI, MASASHI

  DOI：——

  日期：——