octakis(4-tert-butylbenzylthio)-21H,23H-porphyrazine | 1021910-79-1

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: octakis(4-tert-butylbenzylthio)-21H,23H-porphyrazine
• 英文别名: 2,3,7,8,12,13,17,18-octakis(4-tert-butylbenzylthio)21H,23H-porphyrazine；4,5,9,10,14,15,19,20-Octakis[(4-tert-butylphenyl)methylsulfanyl]-2,7,12,17,21,22,23,24-octazapentacyclo[16.2.1.13,6.18,11.113,16]tetracosa-1,3,5,7,9,11(23),12,14,16(22),18(21),19-undecaene；4,5,9,10,14,15,19,20-octakis[(4-tert-butylphenyl)methylsulfanyl]-2,7,12,17,21,22,23,24-octazapentacyclo[16.2.1.13,6.18,11.113,16]tetracosa-1,3,5,7,9,11(23),12,14,16(22),18(21),19-undecaene
• CAS: 1021910-79-1
• 化学式: C₁₀₄H₁₂₂N₈S₈
• 分子量: 1740.69
• InChiKey: YVBLSVXYNOGJQM-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  30.3
• 重原子数：
  120
• 可旋转键数：
  32
• 环数：
  13.0
• sp3杂化的碳原子比例：
  0.38
• 拓扑面积：
  311
• 氢给体数：
  2
• 氢受体数：
  14

反应信息

• 作为反应物：
  描述：

  octakis(4-tert-butylbenzylthio)-21H,23H-porphyrazine 在 nickel diacetate 作用下， 以 四氢呋喃 、 乙醇 为溶剂， 反应 18.0h， 以84%的产率得到(2,3,7,8,12,13,17,18-octakis(4-tert-butylbenzylthio)porphyrazinato)nickel(II)
  参考文献：
  名称：

  Synthesis of Ni(II) porphyrazine peripherally octa-substituted with the 4-tert-butylbenzylthio moiety and electronic properties of the Al/Ni(II)Pz/p-Si Schottky barrier diode

  摘要：

  Magnesium porphyrazinate substituted with eight 4-tert-butylphenylthio-groups on the peripheral positions has been synthesized by cyclotetramerization of 1,2-bis(4-tert-butylphenylthio)maleonitrile in the presence of magnesium butanolate. The metal-free derivative was obtained by its treatment with trifluoroacetic acid, and further reaction of this product with nickel(11) acetate led to the metal porphyrazinate (M = Ni). These new compounds have been characterized by elemental analysis, together with FT-IR. H-1 NMR and UV-Vis spectral data. The electronic properties of a spin coated film of NiPz have been studied by fabricating metal-insulator-semiconductor (MIS) capacitors. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were carried out. It was observed that the Al/NiPz/p-Si structure exhibits rectifying behavior with a barrier height value of 0.89 eV and with an ideality factor value of 1.81. It was seen that this value of the obtained barrier height is remarkably higher than those given for metal/Si semiconductor contacts in the literature. The Lien, So and Nicolet method, combined with conventional forward I-V, was used to extract the series resistance value and it was found to be 26 k ohm. High frequency C-V measurements were used to determine the mobile oxide charge in the NiPz layer and this was found to be 1.6 x 10(11) cm(-2). (C) 2012 Elsevier Ltd. All rights reserved.

  DOI：

  10.1016/j.poly.2012.02.033
• 作为产物：
  描述：

  {octakis(4-tert-butylbenzylthio)porphyrazinato}magnesium(II) 在 三氟乙酸 作用下， 反应 8.0h， 生成 octakis(4-tert-butylbenzylthio)-21H,23H-porphyrazine
  参考文献：
  名称：

  Synthesis of Ni(II) porphyrazine peripherally octa-substituted with the 4-tert-butylbenzylthio moiety and electronic properties of the Al/Ni(II)Pz/p-Si Schottky barrier diode

  摘要：

  Magnesium porphyrazinate substituted with eight 4-tert-butylphenylthio-groups on the peripheral positions has been synthesized by cyclotetramerization of 1,2-bis(4-tert-butylphenylthio)maleonitrile in the presence of magnesium butanolate. The metal-free derivative was obtained by its treatment with trifluoroacetic acid, and further reaction of this product with nickel(11) acetate led to the metal porphyrazinate (M = Ni). These new compounds have been characterized by elemental analysis, together with FT-IR. H-1 NMR and UV-Vis spectral data. The electronic properties of a spin coated film of NiPz have been studied by fabricating metal-insulator-semiconductor (MIS) capacitors. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were carried out. It was observed that the Al/NiPz/p-Si structure exhibits rectifying behavior with a barrier height value of 0.89 eV and with an ideality factor value of 1.81. It was seen that this value of the obtained barrier height is remarkably higher than those given for metal/Si semiconductor contacts in the literature. The Lien, So and Nicolet method, combined with conventional forward I-V, was used to extract the series resistance value and it was found to be 26 k ohm. High frequency C-V measurements were used to determine the mobile oxide charge in the NiPz layer and this was found to be 1.6 x 10(11) cm(-2). (C) 2012 Elsevier Ltd. All rights reserved.

  DOI：

  10.1016/j.poly.2012.02.033

文献信息

• Synthesis and EPR studies of porphyrazines with bulky substituents
  作者：Bahadır Keskin、Yüksel Köseoğlu、Ulvi Avcıata、Ahmet Gül

  DOI：10.1016/j.poly.2007.12.007

  日期：2008.3

  Magnesium porphyrazinate substituted with eight 4-tert-butylphenylthio-groups on the peripheral positions has been synthesized by cyclotetramerization of 1,2-bis(4-tert-butylphenylthio)maleonitrile in the presence of magnesium butanolate. The metal-free derivative was obtained by its treatment with trifluoroacetic acid and further reaction of this product with copper(II) acetate, zinc(II) acetate and cobalt(II) acetate led to the metal porphyrazinates (M = Cu, Zn, Co). These new compounds have been characterized by elemental analysis, together with FT-IR, (1)H NMR, UV-Vis spectral data. By using EPR technique, room temperature paramagnetic properties of Cu(II) doped porphyrazine sample as powder and solution forms were measured. The first-derivative EPR signals taken from as powder and solution forms shows that the sample is axially symmetric. The trend g(parallel to) > g(perpendicular to) > 2 indicates that the unpaired electron is located mainly in the d(x2-y2) orbital ((2)B(1) as ground state). (C) 2008 Elsevier Ltd. All rights reserved.
• Synthesis and EPR studies of soluble vanadyl octakis(4-<i>tert</i>-butylbenzylthio) porphyrazine
  作者：Bahadir Keskin、Yusuf Yerli、Ulvi Avciata

  DOI：10.1080/00958972.2013.811496

  日期：2013.8.1

  Magnesium porphyrazinate substituted with eight 4-tert-butylphenylthio-groups on peripheral positions has been synthesized by cyclotetramerization of 1,2-bis(4-t-butylphenylthio)maleonitrile in the presence of magnesium butanolate. The metal-free derivative was obtained by treatment with trifluoroacetic acid and further reaction of this product with vanadyl(IV) sulfate led to the vanadyl porphyrazinate. These new compounds have been characterized by elemental analysis, together with FTIR, and UV-vis spectral data. The magnetic properties of the complex have been investigated by electron paramagnetic resonance spectroscopy.