[1,1'-Bi(cyclohexane)]-1-yl 2-methylprop-2-enoate | 215179-76-3

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: [1,1'-Bi(cyclohexane)]-1-yl 2-methylprop-2-enoate
• 英文别名: (1-cyclohexylcyclohexyl) 2-methylprop-2-enoate
• CAS: 215179-76-3
• 化学式: C₁₆H₂₆O₂
• 分子量: 250.38
• InChiKey: KRMWWIQCEHLYKO-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5.1
• 重原子数：
  18
• 可旋转键数：
  4
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.81
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  2

文献信息

• PRODUCTION OF POLY(POLYISOCYANATE SILICATE)SOLID OR CELLULAR SOLID UTILIZING ALKALI METAL SILICATES
  申请人：BLOUNT, David H.

  公开号：EP0044832A1

  公开（公告）日：1982-02-03
• EP0044832A4
  申请人：——

  公开号：EP0044832A4

  公开（公告）日：1982-07-06
• Resist polymer, preparing method, resist composition and patterning process
  申请人：Tachibana Seiichiro

  公开号：US20070264592A1

  公开（公告）日：2007-11-15

  A polymer for resist use is prepared by previously charging a reactor with a solution containing a chain transfer agent and holding at a polymerization temperature, and continuously or discontinuously adding dropwise a solution containing monomers and a polymerization initiator to the reactor for radical polymerization. The polymer has a minimized content of a substantially insoluble component. A resist composition using the polymer as a base resin produces a minimized number of defects when processed by photolithography and is useful in forming microscopic patterns.
• RESIST POLYMER, PREPARING METHOD, RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：Tachibana Seiichiro

  公开号：US20110054133A1

  公开（公告）日：2011-03-03

  A polymer for resist use is prepared by previously charging a reactor with a solution containing a chain transfer agent and holding at a polymerization temperature, and continuously or discontinuously adding dropwise a solution containing monomers and a polymerization initiator to the reactor for radical polymerization. The polymer has a minimized content of a substantially insoluble component. A resist composition using the polymer as a base resin produces a minimized number of defects when processed by photolithography and is useful in forming microscopic patterns.
• US4011253A
  申请人：——

  公开号：US4011253A

  公开（公告）日：1977-03-08