作者:Ming-Chou Chen、Choongik Kim、Sheng-Yu Chen、Yen-Ju Chiang、Ming-Che Chung、Antonio Facchetti、Tobin J. Marks
DOI:10.1039/b715746k
日期:——
Two new semiconductors for organic thin-film transistors (OTFTs), diperfluorophenyl anthradithiophene (DFPADT) and dimethyl anthradithiophene (DMADT), have been synthesized and characterized. The first material exhibits ambipolar transport in OTFT devices with field-effect mobilities (μ) of 6 × 10−4 cm2 V−1 s−1 and 0.05 cm2 V−1 s−1 for electrons and holes, respectively. Therefore, diperfluorophenyl substitution was found to be effective to induce n-type transport. Dimethyl-substituted anthradithiophene (DMADT) was also synthesized for comparison and exhibited exclusively hole transport with carrier mobility of ∼0.1 cm2 V−1 s−1. Within this semiconductor family, OTFT carrier mobility values are strongly dependent on the semiconductor film growth conditions, substrate deposition temperatures, and gate dielectric surface treatment.
合成并表征了两种新的有机薄膜晶体管(OTFT)的半导体材料,分别为双氟苯基蒽二硫醚(DFPADT)和二甲基蒽二硫醚(DMADT)。第一种材料在OTFT器件中表现出双极输运,电子和孔的场效应迁移率(μ)分别为6 × 10−4 cm2 V−1 s−1和0.05 cm2 V−1 s−1。因此,发现双氟苯基取代能够有效地诱导n型输运。二甲基取代的蒽二硫醚(DMADT)也进行了合成以作比较,结果仅表现出孔输运,载流子迁移率约为0.1 cm2 V−1 s−1。在这个半导体家族中,OTFT的载流子迁移率值强烈依赖于半导体薄膜的生长条件、基片沉积温度和栅极介电层的表面处理。