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4,6-di(thiophen-2-yl)pyrimidine | 39242-05-2

中文名称
——
中文别名
——
英文名称
4,6-di(thiophen-2-yl)pyrimidine
英文别名
4,6-dithien-2-ylpyrimidine;4,6-Di(thien-2-yl)pyrimidine;4,6-dithiophen-2-ylpyrimidine
4,6-di(thiophen-2-yl)pyrimidine化学式
CAS
39242-05-2
化学式
C12H8N2S2
mdl
——
分子量
244.341
InChiKey
PYAGONOHANWCES-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    3
  • 重原子数:
    16
  • 可旋转键数:
    2
  • 环数:
    3.0
  • sp3杂化的碳原子比例:
    0.0
  • 拓扑面积:
    82.3
  • 氢给体数:
    0
  • 氢受体数:
    4

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为反应物:
    描述:
    4,6-di(thiophen-2-yl)pyrimidinepotassium phosphateN-溴代丁二酰亚胺(NBS)四(三苯基膦)钯 作用下, 以 1,4-二氧六环N,N-二甲基甲酰胺 为溶剂, 反应 24.5h, 生成 4,6-bis[5-(9-ethyl-9H-carbazol-3-yl)thiophen-2-yl]pyrimidine
    参考文献:
    名称:
    研究4,6-二(杂)芳基取代的嘧啶类化合物作为非掺杂OLED和激光染料的发射体
    摘要:
    已经设计和研究了两种基于嘧啶受体的新型V形推挽系统。荧光和延迟发光光谱的低温测量表明,化合物的发射带具有电荷转移特性。 尽管热真空沉积膜中的化合物具有较低的荧光量子产率,但基于它们的OLED器件显示出高效率,这可以通过延迟荧光与发射机理相关联。发现在暴露于氯仿溶液中的荧光团的紫外线下获得的光产物在光谱的红色区域表现出激光活性。
    DOI:
    10.1016/j.jphotochem.2020.113089
  • 作为产物:
    参考文献:
    名称:
    Kauffmann,T. et al., Angewandte Chemie, 1972, vol. 84, p. 830 - 831
    摘要:
    DOI:
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文献信息

  • Deprotonative Metalation of Substituted Benzenes and Heteroaromatics Using Amino/Alkyl Mixed Lithium-Zinc Combinations
    作者:Katia Snégaroff、Shinsuke Komagawa、Floris Chevallier、Philippe C. Gros、Stéphane Golhen、Thierry Roisnel、Masanobu Uchiyama、Florence Mongin
    DOI:10.1002/chem.201000543
    日期:2010.7.19
    Different homoleptic and heteroleptic lithium–zinc combinations were prepared, and structural elements obtained on the basis of NMR spectroscopic experiments and DFT calculations. In light of their ability to metalate anisole, pathways were proposed to justify the synergy observed for some mixtures. The best basic mixtures were obtained either by combining ZnCl2⋅TMEDA (TMEDA=N,N,N′,N′‐tetramethylethylenediamine)
    制备了不同的均溶和异溶锂-锌组合,并根据NMR光谱实验和DFT计算获得了结构元素。考虑到它们使苯甲醚金属化的能力,提出了一些途径以证明对某些混合物观察到的协同作用是正确的。通过结合ZnCl 2 · TMEDA(TMEDA = N,N,N',N'-四甲基乙二胺)([tmp = 2,2,6,6-四甲基哌啶子基; 3当量)或通过用烷基取代先有混合物中的tmp之一。接下来研究了据推测形成的芳香族锌酸锂的反应性,并证明其与底物,碱和亲电试剂有关。芳族锌酸锂最终参与了钯与芳族氯化物和溴化物的交叉偶联反应。
  • n-Type Thiophene Semiconductors
    申请人:Marks Tobin J.
    公开号:US20080293937A1
    公开(公告)日:2008-11-27
    The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, α,ω-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm 2 /Vs—some of the highest reported to date for n-type organic semiconductors.
    新的氟碳功能化和/或杂环改性的聚噻吩,特别是α,ω-双氟己基六噻吩DFH-6T可以直接高产率和纯度制备。将这些修饰引入到噻吩核心可以提高热稳定性和挥发性,增加电子亲和力,相比先前艺术中未经修改的组分。蒸发膜表现为n型半导体,可用于制备具有FET迁移率˜0.01 cm2/Vs的薄膜晶体管-这是迄今为止报道的n型有机半导体中最高的一些值。
  • Thiophene-Diazine Molecular Semiconductors: Synthesis, Structural, Electrochemical, Optical, and Electronic Structural Properties; Implementation in Organic Field-Effect Transistors
    作者:Rocío Ponce Ortiz、Juan Casado、Víctor Hernández、Juan T. López Navarrete、Joseph A. Letizia、Mark A. Ratner、Antonio Facchetti、Tobin J. Marks
    DOI:10.1002/chem.200802424
    日期:2009.5.11
    New transportation: New thiophene‐based semiconductors have been produced and studied by electrochemistry, various spectroscopic methods, and structural and morphological techniques in conjunction with model chemistry. Their electrical properties have been analyzed by implementation in field‐effect transistor devices (see figure).
    新的运输方式:通过电化学,各种光谱方法,结构和形态学技术以及模型化学,已经生产并研究了基于噻吩的新型半导体。通过在场效应晶体管器件中的实现对它们的电性能进行了分析(见图)。
  • n-Type thiophene semiconductors
    申请人:Marks J. Tobin
    公开号:US20050119440A1
    公开(公告)日:2005-06-02
    The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, α,ω-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm 2 /Vs—some of the highest reported to date for n-type organic semiconductors.
    新的氟碳功能化和/或杂环修饰的聚噻吩,尤其是α,ω-二氟己基六噻吩DFH-6T可以直接制备高收率和高纯度。将这样的修饰引入到噻吩核心中可提供比先前未经修改的组合物具有增强的热稳定性和挥发性,以及增加的电子亲和力。蒸发薄膜表现为n型半导体,并可用于制备具有FET迁移率约0.01 cm2/Vs的薄膜晶体管-这是迄今为止报道的n型有机半导体中最高的之一。
  • n-type thiophene semiconductors
    申请人:Northwestern University
    公开号:US20030080324A1
    公开(公告)日:2003-05-01
    The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, &agr;,&ohgr;-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities 0.01 cm 2 /Vs—some of the highest reported to date for n-type organic semiconductors. 1
    新的氟碳功能化和/或杂环改性的聚噻吩,尤其是α,ω-二氟己基六噻吩DFH-6T可以直接高产高纯度制备。将这种改性引入到噻吩核心中,可提高热稳定性和挥发性,并增加电子亲和力,相比于先前的未改性组合物。蒸发膜表现为n型半导体,可用于制备薄膜晶体管,其场效应迁移率为0.01 cm2/Vs,是迄今为止报道的n型有机半导体中最高的之一。1
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