1,1,2-trifluoro-4-hydroxybutanesulfonic acid | 244253-61-0

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 有机磺酸及其衍生物
• 英文名称: 1,1,2-trifluoro-4-hydroxybutanesulfonic acid
• 英文别名: 1,1,2-Trifluoro-4-hydroxybutane-1-sulfonic acid
• CAS: 244253-61-0
• 化学式: C₄H₇F₃O₄S
• 分子量: 208.158
• InChiKey: MMDMAUHADOFKQK-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0
• 重原子数：
  12
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  83
• 氢给体数：
  2
• 氢受体数：
  7

反应信息

• 作为产物：
  描述：

  3,4,4-三氟-3-丁烯-1-醇 在 sodium hydrogensulfite 、 sodium sulfite 作用下， 以 水 为溶剂， 生成 1,1,2-trifluoro-4-hydroxybutanesulfonic acid
  参考文献：
  名称：

  Fluorine-contained photoacid generators (PAGs) and corresponding polymer resists

  摘要：

  A new series of fluorinated anionic photoacid generators (PACs) (F4-MBS-TPS, F4VBzBS-TPS, F4-IBBS-TPS, CF3 MBS-TPS, MTFBS-TPS and VBzTFBS-TPS), and corresponding PAG bound polymeric resists (HS-EA-PAG) based on hydroxystyrene (HOST) and 2-ethyl-2-adamantyl methacrylate (EA), (GB-EA-PAG) based on gamma-butyrolactone methacrylate (GBLMA) and 2-ethyl-2-adamantyl methacrylate (EA) were prepared and characterized. The acid generating efficiency of PAG bound polymers (HS-EA-PAG) series was in the range of 54-81%, which agrees well with the electron withdrawing effect of the substituents. With regard to the referenced F4-PAG bound polymer with 68% acid generating efficiency, and our previously reported EUVL results of F4-MBS-TPS bound polymer photoresists, these new PAG bound polymers should be effective resists for 193 nm or EUV lithography. (c) 2008 Elsevier B.V. All rights reserved.

  DOI：

  10.1016/j.jfluchem.2008.04.014

文献信息

• Fluorine-contained photoacid generators (PAGs) and corresponding polymer resists
  作者：Mingxing Wang、Wang Yueh、Kenneth E. Gonsalves

  DOI：10.1016/j.jfluchem.2008.04.014

  日期：2008.7

  A new series of fluorinated anionic photoacid generators (PACs) (F4-MBS-TPS, F4VBzBS-TPS, F4-IBBS-TPS, CF3 MBS-TPS, MTFBS-TPS and VBzTFBS-TPS), and corresponding PAG bound polymeric resists (HS-EA-PAG) based on hydroxystyrene (HOST) and 2-ethyl-2-adamantyl methacrylate (EA), (GB-EA-PAG) based on gamma-butyrolactone methacrylate (GBLMA) and 2-ethyl-2-adamantyl methacrylate (EA) were prepared and characterized. The acid generating efficiency of PAG bound polymers (HS-EA-PAG) series was in the range of 54-81%, which agrees well with the electron withdrawing effect of the substituents. With regard to the referenced F4-PAG bound polymer with 68% acid generating efficiency, and our previously reported EUVL results of F4-MBS-TPS bound polymer photoresists, these new PAG bound polymers should be effective resists for 193 nm or EUV lithography. (c) 2008 Elsevier B.V. All rights reserved.