2-乙基-2-氰基-丁酸 | 4386-07-6

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 中文名称: 2-乙基-2-氰基-丁酸
• 英文名称: 2-ethyl-2-cyano-butyric acid
• 英文别名: 2-Aethyl-2-cyan-buttersaeure；Diaethylmalonsaeure-mononitril；Diaethylcyanessigsaeure；2,2-Diethyl-cyanessigsaeure；2-Cyano-2-ethylbutanoic acid
• CAS: 4386-07-6
• 化学式: C₇H₁₁NO₂
• 分子量: 141.17
• InChiKey: UXZGCSZDLSBANM-UHFFFAOYSA-N

物化性质

• 熔点：
  61 °C
• 沸点：
  145-146 °C(Press: 14 Torr)
• 密度：
  1.068±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  1.3
• 重原子数：
  10
• 可旋转键数：
  3
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.71
• 拓扑面积：
  61.1
• 氢给体数：
  1
• 氢受体数：
  3

安全信息

• 海关编码：
  2926909090
• 危险性防范说明：
  P261,P264,P270,P271,P280,P301+P312,P302+P352,P304+P340,P305+P351+P338,P330,P332+P313,P337+P313,P362,P403+P233,P405,P501
• 危险性描述：
  H302,H312,H315,H319,H332,H335

反应信息

• 作为反应物：
  描述：

  2-乙基-2-氰基-丁酸 在 乙醚 、 五氯化磷 作用下， 生成 2,2-Diethyl-cyan-acetylchlorid
  参考文献：
  名称：

  Schroeter et al., Chemische Berichte, 1932, vol. 65, p. 432,441

  摘要：

  DOI：
• 作为产物：
  描述：

  alkaline earth salt of/the/ methylsulfuric acid 生成 2-乙基-2-氰基-丁酸
  参考文献：
  名称：

  THE REACTION BETWEEN BARBITAL (DIETHYLBARBITURIC ACID) AND PHOSPHORUS PENTACHLORIDE

  摘要：

  DOI：

  10.1021/ja01355a059

文献信息

• [EN] COMPOUND FOR INHIBITING THE GROWTH AND PROLIFERATION OF HUMAN LIVER CANCER CELLS AND METHOD FOR SYNTHESIZING IT<br/>[FR] COMPOSÉ POUR INHIBER LA CROISSANCE ET LA PROLIFÉRATION DE CELLULES DE CANCER DU FOIE HUMAIN ET SON PROCÉDÉ DE SYNTHÈSE
  申请人：ALGHAMDI ZAINAB SAEED

  公开号：WO2018056872A1

  公开（公告）日：2018-03-29

  The compound 2-((4-nitrophenyl)amino)-6,7,8,9-tetrahydro-3H-cyclohepta[4,5]thieno[2, 3-d]pyrimidin-4(5H)-one and method of synthesizing it, wherein the compound is effective to inhibit the growth and proliferation of human liver cancer cells HepG2. The compound has an inhibitory concentration value (IC50) of 0.7 μg, compared to reference medication Doxorubicin that has an (IC50) value of 1.2 μg. It further surpasses that reference medication Doxorubicin at all tested concentraions. The method includes the steps of: preparing a first compound of cycloheptanone, ethyl cyanoacetate, sulfur, ethanol and diethyl amine; preparing a second compound by heating of the first compound with excess of hydrazine hydrate in absolute ethanol as solvent; and preparing the effective compound of the invention by reaction of the second chemical compound with 4-nitrophenylisothiocyanate in dry dimethylformamide as solvent.

  该化合物为2-((4-硝基苯基)氨基)-6,7,8,9-四氢-3H-环庚并[4,5]噻吩[2,3-d]嘧啶-4(5H)-酮，以及合成它的方法，其中该化合物有效抑制人类肝癌细胞HepG2的生长和增殖。该化合物的抑制浓度值（IC50）为0.7微克，而参考药物多柔比星的IC50值为1.2微克。在所有测试浓度下，它进一步超越了多柔比星参考药物。该方法包括以下步骤：准备环庚酮、乙基氰乙酸酯、硫、乙醇和二乙胺的第一化合物；通过在绝对乙醇中过量加热第一化合物与肼水合物制备第二化合合物；并通过在干二甲基甲酰胺作为溶剂的条件下将第二化合物与4-硝基苯基异硫氰酸酯反应制备出发明中的有效化合物。
• CHEMICAL MECHANICAL POLISHING AND WAFER CLEANING COMPOSITION COMPRISING AMIDOXIME COMPOUNDS AND ASSOCIATED METHOD FOR USE
  申请人：Lee Wai Mun

  公开号：US20090130849A1

  公开（公告）日：2009-05-21

  A composition and associated method for chemical mechanical planarization (or other polishing) is described. The composition contains an amidoxime compound and water. The composition may also contain an abrasive and a compound with oxidation and reduction potential. The composition is useful for attaining improved removal rates for metal, including copper, barrier material, and dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications.

  本文描述了一种化学机械平整化（或其他抛光）的组合物及其相关方法。该组合物含有一种酰胺肟化合物和水。该组合物还可以含有磨料和具有氧化还原潜力的化合物。该组合物可用于在金属CMP中获得改进的金属去除速率，包括铜、屏障材料和金属CMP中的介电层材料。该组合物在金属CMP应用的相关方法中特别有用。
• METHODS OF CLEANING SEMICONDUCTOR DEVICES AT THE BACK END OF LINE USING AMIDOXIME COMOSITIONS
  申请人：Lee Wai Mun

  公开号：US20100043823A1

  公开（公告）日：2010-02-25

  The present invention relates to aqueous compositions comprising amidoxime compounds and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous solutions. The compositions of the invention may optionally contain one or more other acid compounds, one or more basic compounds, and a fluoride-containing compound and additional components such as organic solvents, chelating agents, amines, and surfactants. The invention also relates to a method of removing residue from a substrate during integrated circuit fabrication.

  本发明涉及含有酰胺肟化合物的水性组合物及其清洗半导体衬底上等离子体刻蚀残留物的方法，包括这种稀释的水性溶液。本发明的组合物可以选择性地含有一种或多种其他酸性化合物、一种或多种碱性化合物、含氟化合物和其他成分，如有机溶剂、螯合剂、胺和表面活性剂。本发明还涉及一种在集成电路制造过程中从衬底上去除残留物的方法。
• COMPOSITION COMPRISING CHELATING AGENTS CONTAINING AMIDOXIME COMPOUNDS
  申请人：Lee Wai Mun

  公开号：US20100105595A1

  公开（公告）日：2010-04-29

  The present invention is a novel aqueous cleaning solution for use in semiconductor front end of the line (FEOL) manufacturing process wherein the cleaning solution comprises at least one amidoxime compound.

  本发明是一种用于半导体前端制造过程中的新型水性清洗溶液，其中清洗溶液包含至少一种酰胺肟化合物。
• METHODS OF POST CHEMICAL MECHANICAL POLISHING AND WAFER CLEANING USING AMIDOXIME COMPOSITIONS
  申请人：Lee Wai Mun

  公开号：US20090133716A1

  公开（公告）日：2009-05-28

  The invention relates to a method for the removal of residues and contaminants from metal or dielectric surfaces and to a method for chemical mechanical polishing of a copper or aluminum surface. The methods of the invention include using an aqueous amidoxime complex agent. Optionally, the pH of the solution can be adjusted with an acid or base. The method includes applying the above composition to the copper or aluminum surface and polishing the surface in the presence of the composition.

  本发明涉及一种从金属或介电表面去除残留物和污染物的方法，以及一种化学机械抛光铜或铝表面的方法。本发明的方法包括使用水溶性的酰胺肟络合剂。可选地，可以使用酸或碱调整溶液的pH值。该方法包括将上述组合物应用于铜或铝表面，并在组合物存在的情况下抛光表面。