2,2,3,3,3-Pentafluoropropyl 2-chloroprop-2-enoate | 74359-16-3

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: 2,2,3,3,3-Pentafluoropropyl 2-chloroprop-2-enoate
• CAS: 74359-16-3
• 化学式: C₆H₄ClF₅O₂
• 分子量: 238.54
• InChiKey: GEZVEZDEHWLOMF-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.3
• 重原子数：
  14
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.5
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  7

文献信息

• POLYMER, POSITIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING METHOD
  申请人：Zeon Corporation

  公开号：EP3409700A1

  公开（公告）日：2018-12-05

  A polymer includes a monomer unit (A) represented by general formula (I), shown below, and a monomer unit (B) represented by general formula (II), shown below, wherein at least one of the monomer unit (A) and the monomer unit (B) includes at least one fluorine atom. In the formulae, R1 is a chlorine atom, a fluorine atom, or a fluorine atom-substituted alkyl group, R2 is an unsubstituted alkyl group or a fluorine atom-substituted alkyl group, R3 to R6, R8, and R9 are each a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R7 is a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of at least 0 and not more than 5, and p + q = 5.

  聚合物包括下图所示通式(I)代表的单体单元(A)和下图所示通式(II)代表的单体单元(B)，其中单体单元(A)和单体单元(B)中至少有一个包括至少一个氟原子。式中，R1 是氯原子、氟原子或氟原子取代的烷基，R2 是未取代的烷基或氟原子取代的烷基，R3 至 R6、R8 和 R9 分别是氢原子、氟原子、未取代的烷基、氟原子或氟原子取代的烷基、R7 是氢原子、未取代的烷基或氟原子取代的烷基，p 和 q 分别是至少 0 但不超过 5 的整数，且 p + q = 5。
• POLYMER, POSITIVE RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD
  申请人：Zeon Corporation

  公开号：EP3564276A1

  公开（公告）日：2019-11-06

  Provided is a polymer that when used as a main chain scission-type positive resist, can sufficiently inhibit resist pattern collapse, can favorably form a clear resist pattern, and can also improve sensitivity. The polymer includes a monomer unit (A) represented by general formula (I), shown below, and a monomer unit (B) represented by general formula (II), shown below. [In formula (I), R1 is an organic group including not fewer than 5 and not more than 7 fluorine atoms. In formula (II), R2 is a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R3 is a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of not less than 0 and not more than 5, and p + q = 5.]

  本发明提供了一种聚合物，当它用作主链裂解型正抗蚀剂时，可以充分抑制抗蚀图案的塌陷，有利于形成清晰的抗蚀图案，还可以提高灵敏度。该聚合物包括由下图所示通式（I）表示的单体单元（A）和由下图所示通式（II）表示的单体单元（B）。[在式（I）中，R1 是一个有机基团，包括不少于 5 个但不多于 7 个氟原子。在式 (II) 中，R2 是氢原子、氟原子、未取代的烷基或氟原子取代的烷基，R3 是氢原子、未取代的烷基或氟原子取代的烷基，p 和 q 分别是不小于 0 且不大于 5 的整数，且 p + q = 5。］
• RESIST COMPOSITION AND RESIST FILM
  申请人：Zeon Corporation

  公开号：EP3751345A1

  公开（公告）日：2020-12-16

  Provided are a resist composition that can improve coatability (coating film formability) with respect to a substrate in spin coating and close adherence of a resist film and that can form a good pattern, and a resist film in which a good pattern is formed. The resist composition contains a polymer, a solvent, and an aromatic vinyl monomer, and has a content of the aromatic vinyl monomer relative to the polymer of not less than 10 mass ppm and not more than 30,000 mass ppm.

  本发明提供了一种抗蚀剂组合物，该抗蚀剂组合物在抗蚀剂薄膜的旋涂和紧密附着过程中可提高相对于基材的涂布性（涂膜成形性），并可形成良好的图案，还提供了一种可形成良好图案的抗蚀剂薄膜。抗蚀剂组合物含有聚合物、溶剂和芳香族乙烯基单体，芳香族乙烯基单体相对于聚合物的含量不低于 10 质量ppm，不超过 30,000 质量ppm。
• METHOD FOR FORMING RESIST PATTERN
  申请人：Zeon Corporation

  公开号：EP3751346A1

  公开（公告）日：2020-12-16

  A method of forming a resist pattern includes: a step of forming a resist film using a positive resist composition containing a solvent and a polymer including monomer units represented by the following formulae (I) and (II), respectively; an exposure step; a development step; and a step of rinsing the developed resist film using a rinsing liquid having a surface tension of 20.0 mN/m or less. In formula (I), R1 is an organic group including 3 to 7 fluorine atoms. In formula (II), R2 is a hydrogen atom, a fluorine atom, or an unsubstituted or fluorine atom-substituted alkyl group, R3 is a hydrogen atom or an unsubstituted or fluorine atom-substituted alkyl group, p and q are each an integer of 0 to 5, and p + q = 5.

  一种形成抗蚀剂图案的方法包括：使用正抗蚀剂组合物形成抗蚀剂薄膜的步骤，该组合物含有溶剂和聚合物，聚合物包括分别由下式（I）和（II）表示的单体单元；曝光步骤；显影步骤；以及使用表面张力为 20.0 mN/m 或更小的漂洗液漂洗显影后的抗蚀剂薄膜的步骤。在式 (I) 中，R1 是包括 3 至 7 个氟原子的有机基团。在式 (II) 中，R2 是氢原子、氟原子或未取代或氟原子取代的烷基，R3 是氢原子或未取代或氟原子取代的烷基，p 和 q 各为 0 至 5 的整数，且 p + q = 5。
• Method of forming resist pattern
  申请人：ZEON CORPORATION

  公开号：US11215925B2

  公开（公告）日：2022-01-04

  A method of forming a resist pattern includes: a step of forming a resist film using a positive resist composition containing a solvent and a polymer including monomer units represented by the following formulae (I) and (II), respectively; an exposure step; a development step; and a step of rinsing the developed resist film using a rinsing liquid having a surface tension of 20.0 mN/m or less. In formula (I), R1 is an organic group including 3 to 7 fluorine atoms. In formula (II), R2 is a hydrogen atom, a fluorine atom, or an unsubstituted or fluorine atom-substituted alkyl group, R3 is a hydrogen atom or an unsubstituted or fluorine atom-substituted alkyl group, p and q are each an integer of 0 to 5, and p+q=5.

  一种形成抗蚀剂图案的方法包括：使用正抗蚀剂组合物形成抗蚀剂薄膜的步骤，该组合物含有溶剂和聚合物，聚合物包括分别由下式（I）和（II）表示的单体单元；曝光步骤；显影步骤；以及使用表面张力为 20.0 mN/m 或更小的漂洗液漂洗显影后的抗蚀剂薄膜的步骤。在式 (I) 中，R1 是包括 3 至 7 个氟原子的有机基团。在式 (II) 中，R2 是氢原子、氟原子或未取代或氟原子取代的烷基，R3 是氢原子或未取代或氟原子取代的烷基，p 和 q 分别是 0 至 5 的整数，且 p+q=5 。