2,7-di-m-tolyl-benzo[lmn][3,8]phenanthroline-1,3,6,8-tetraone | 122679-61-2

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 吡啶及其衍生物
• 英文名称: 2,7-di-m-tolyl-benzo[lmn][3,8]phenanthroline-1,3,6,8-tetraone
• 英文别名: 2,7-Di-m-tolyl-benzo[lmn][3,8]phenanthrolin-1,3,6,8-tetraon；2,7-bis(3-methylphenyl)benzo[lmn][3,8]phenanthroline-1,3,6,8(2H,7H)-tetrone；6,13-bis(3-methylphenyl)-6,13-diazatetracyclo[6.6.2.04,16.011,15]hexadeca-1(15),2,4(16),8,10-pentaene-5,7,12,14-tetrone
• CAS: 122679-61-2
• 化学式: C₂₈H₁₈N₂O₄
• 分子量: 446.462
• InChiKey: XNXRCZLYDPHNBP-UHFFFAOYSA-N

物化性质

• 沸点：
  734.0±60.0 °C(Predicted)
• 密度：
  1.436±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  5
• 重原子数：
  34
• 可旋转键数：
  2
• 环数：
  6.0
• sp3杂化的碳原子比例：
  0.07
• 拓扑面积：
  74.8
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  1,4,5,8-萘四甲酸 、 3-甲基苯胺 在 溶剂黄146 作用下， 生成 2,7-di-m-tolyl-benzo[lmn][3,8]phenanthroline-1,3,6,8-tetraone
  参考文献：
  名称：

  Hensel,W., Diss. S. 190

  摘要：

  DOI：

文献信息

• Hensel,W., Diss. <Frankfurt/M. 1958> S. 190
  作者：Hensel,W.

  DOI：——

  日期：——
• N-type semiconductor materials for thin film transistors
  申请人：Shukla Deepak

  公开号：US20070096084A1

  公开（公告）日：2007-05-03

  A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
• N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS
  申请人：Shukla Deepak

  公开号：US20090312553A1

  公开（公告）日：2009-12-17

  A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
• US7629605B2
  申请人：——

  公开号：US7629605B2

  公开（公告）日：2009-12-08
• US7807994B2
  申请人：——

  公开号：US7807994B2

  公开（公告）日：2010-10-05