Sulfur Containing Heterocycle-Fused Naphthalene Tetracarboxylic Acid Diimide Derivatives, Preparation Method And Use Thereof
申请人:Gao Xike
公开号:US20120253045A1
公开(公告)日:2012-10-04
Sulfur containing heterocycle-fused naphthalenetetracarboxylic acid diimide derivatives represented by formula (I) are disclosed,
in which, R
1
and R
2
are C
1
-C
30
and C
1
-C
12
linear alkyl or branched alkyl, respectively; R
3
is H or halogen atom. The preparation method of the derivatives and the use thereof in manufacture of organic thin film field effect transistor or organic solar batteries are also disclosed.
[EN] SULFUR CONTAINING HETEROCYCLE-FUSED NAPHTHALENE TETRACARBOXYLIC ACID DIIMIDE DERIVATIVES, PREPARATION METHOD AND USE THEREOF<br/>[FR] DÉRIVÉS DE DIIMIDE D'ACIDE NAPHTALÈNE-TÉTRACARBOXYLIQUE CONDENSÉ AVEC UN HÉTÉROCYCLE CONTENANT DU SOUFRE, PROCÉDÉ DE PRÉPARATION ET UTILISATION DE CEUX-CI
申请人:SHANGHAI INST ORGANIC CHEM
公开号:WO2011047624A1
公开(公告)日:2011-04-28
Sulfur containing heterocycle-fused naphthalene tetracarboxylic acid diimide derivatives represented by formula (I) are disclosed, in which R1 and R2 are C1-C30 and C1-C12 linear alkyl or branched alkyl, respectively, and R3 is H or halogen atom. The preparation method of said derivatives and the use thereof in manufacture of organic thin film field effect transistor or organic solar batteries are also disclosed.
Core-Expanded Naphthalene Diimides Fused with Sulfur Heterocycles and End-Capped with Electron-Withdrawing Groups for Air-Stable Solution-Processed n-Channel Organic Thin Film Transistors
present compounds bear the branched N-alkyl substituents with the carbon atom numbers from 12 to 24, which guarantees good material solubility. The solution-processed, bottom-gate organicthinfilmtransistors based on new compounds 3−12 operate well in air with the electron mobility ranging from ∼10−6 to 0.26 cm2 V−1 s−1, depending on the nature of the branched N-alkyl substituent and the π-backbone
芯膨胀的萘二酰亚胺的四个家族(NDI)衍生物,设计并合成,即,NDI-DTYM2(1 - 7,其中1和2以前报道),NDI-DTDCN2(8和9),NDI-DTYCA2(10和11),以及NDI-DCT2(12),其中NDI核融合了两个2-(1,3-二硫醇-2-亚甲基)丙二腈(DTYM)基团,两个1,4-二硫氨酸-2,3-二碳腈(DTDCN)基团,两个烷基2-(1 ,3-二硫基-2-亚烷基)氰基乙酸酯(DTYCA)基团和两个2,3-二氰基噻吩(DCT)基团。本发明化合物的NDI核心带有碳原子数为12至24的支链N-烷基取代基,这保证了良好的材料溶解性。的溶液处理,底栅有机薄膜基于新化合物晶体管3 - 12与空气中的电子迁移率范围为〜10操作以及-6至0.26厘米2 V -1小号-1,取决于的性质支链的N-烷基取代基和π-主链结构。