申请人:AIR PRODUCTS AND CHEMICALS, INC.
公开号:EP2322690A2
公开(公告)日:2011-05-18
Metal-containing films may be formed by atomic layer deposition using precursors of the formula:
wherein M is Group 4 metals; wherein R1 and R2 are independently selected from the group consisting of linear or branched C1-10 alkyls and C6-12 aryls; R3 is selected from the group consisting of linear or branched C1-10 alkyls and C6-12 aryls, and is preferably C1-3 alkyl; R4 is selected from the group consisting of hydrogen, C1-10 alkyls, and C6-12 aryls, and is preferably hydrogen; R5 is selected from the group consisting of linear or branched C1-10 alkyls and C6-12 aryls, and is preferably a methyl or ethyl group; and X = O or N, wherein when X = O, y = 1 and R1, 2 and 5 are the same, and when X = N, y = 2 and each R5 can be the same or different.
含金属的薄膜可通过使用式中的前驱体进行原子层沉积形成:
其中 M 为第 4 族金属;其中 R1 和 R2 独立地选自由直链或支链 C1-10 烷基和 C6-12 芳基组成的组;R3 选自由直链或支链 C1-10 烷基和 C6-12 芳基组成的组,最好是 C1-3 烷基;R4选自由氢、C1-10烷基和C6-12芳基组成的组,最好是氢;R5选自由直链或支链C1-10烷基和C6-12芳基组成的组,最好是甲基或乙基;X=O或N,其中当X=O时,y=1,R1、2和5相同,当X=N时,y=2,每个R5可以相同或不同。