High performance organic field-effect transistors based on single-crystal microribbons and microsheets of solution-processed dithieno[3,2-b:2′,3′-d]thiophene derivatives
A Ball-Milling-Enabled Cross-Electrophile Coupling
作者:Andrew C. Jones、William I. Nicholson、Jamie A. Leitch、Duncan L. Browne
DOI:10.1021/acs.orglett.1c02096
日期:2021.8.20
cross-electrophile coupling of aryl halides and alkyl halides enabled by ball-milling is herein described. Under a mechanochemical manifold, the reductive C–C bond formation was achieved in the absence of bulk solvent and air/moisture sensitive setups, in reaction times of 2 h. The mechanical action provided by ball milling permits the use of a range of zinc sources to turnover the nickelcatalyticcycle, enabling
High performance organic field-effect transistors based on single-crystal microribbons and microsheets of solution-processed dithieno[3,2-b:2′,3′-d]thiophene derivatives
We present Ï-conjugated dithieno[3,2-b:2â²,3â²-d]thiophene derivatives that act as high-performance p-type organic semiconductors. These molecules self-organize into single-crystal microribbons or microsheets. High carrier mobilities of up to 10.2 cm2 Vâ1 sâ1 and high on/off ratios of â¼107 have been achieved in organic single-crystal field-effect transistors.
ORGANIC SEMICONDUCTOR DEVICE AND ITS PRODUCTION METHOD, AND COMPOUND
申请人:ADACHI Chihaya
公开号:US20130207081A1
公开(公告)日:2013-08-15
An organic semiconductor device which has an organic semiconductor layer formed by crystallizing a compound represented by the following formula (1) from a solution of the compound:
wherein X
1
, X
2
and X
3
represent O, S, Se or Te; at least one of R
1
, R
2
, R
3
and R
4
represents a group that has both an aromatic ring to form a π-conjugated system with the skeleton to which it bonds, and a chainlike structure in which the number of the carbon atoms constituting the main chain is from 4 to 20, and the remaining ones represent a hydrogen atom or a substituent.
The present invention relates, inter alia, to compositions comprising, a compound which is able to emit and/or absorb light and a compound which is able either to absorb or emit light, where both compounds each include at least one fluorine radical. The present invention is furthermore directed to a process for the preparation of the composition, to the use of the composition in electronic devices and to the device itself.
Diimide-based semiconductor materials and methods of preparing and using the same
申请人:Facchetti Antonio
公开号:US20080185577A1
公开(公告)日:2008-08-07
Diimide-based semiconductor materials are provided with processes for preparing the same. Composites and electronic devices including the diimide-based semiconductor materials also are provided.