[EN] RESISTIVE MEMORY DEVICES BASED ON METAL COORDINATED REDOX ACTIVE LIGANDS<br/>[FR] DISPOSITIFS À MÉMOIRE RÉSISTIVE BASÉS SUR DES LIGANDS À ACTIVITÉ REDOX COORDONNÉS À UN MÉTAL
申请人:NAT UNIV SINGAPORE
公开号:WO2019066729A1
公开(公告)日:2019-04-04
Disclosed herein is a compound of formula (I): [M(L)n]m+ (Ay-)z (I) wherein M represents Ru, Fe, Co, Rh, Ir, Ni, Os, Cr, Cu or Mn; A represents an anionic group having a charge y, wherein y is 1 to 4, m is 1 to 4, n is 2 to 6, z is 1 to 4, and L is a ligand selected from the ligand of formula (ll)-(VII). In preferred embodiments, ligand L is 2-(phenylazo)pyridine or 2,6-bis(phenylazo))pyridine. The compound of formula (I) can be used in the formation of a resistive memory device, which is based on the low potential redox-states of metal complexes of redox active ligands. Also disclosed herein are methods of manufacturing such devices and their uses.
本文揭示的是式(I)的化合物:[M(L)n]m+ (Ay-)z (I),其中M代表Ru、Fe、Co、Rh、Ir、Ni、Os、Cr、Cu或Mn;A代表带有电荷y的阴离子基团,其中y为1至4,m为1至4,n为2至6,z为1至4,L是从式(ll)-(VII)的配体中选择的配体。在优选实施例中,配体L为2-(苯基偶氮基)吡啶或2,6-双(苯基偶氮基)吡啶。式(I)的化合物可用于形成基于金属配合物的低电位氧化还原活性配体的抗性存储器件。本文还揭示了制造这类设备的方法及其用途。