Disclosed herein is a compound of formula (I): [M(L)n]m+ (Ay-)z (I) wherein M represents Ru, Fe, Co, Rh, Ir, Ni, Os, Cr, Cu or Mn; A represents an anionic group having a charge y, wherein y is 1 to 4, m is 1 to 4, n is 2 to 6, z is 1 to 4, and L is a ligand selected from the ligand of formula (ll)-(VII). In preferred embodiments, ligand L is 2-(phenylazo)pyridine or 2,6-bis(phenylazo))pyridine. The compound of formula (I) can be used in the formation of a resistive memory device, which is based on the low potential redox-states of metal complexes of redox active ligands. Also disclosed herein are methods of manufacturing such devices and their uses.
本文揭示的是式(I)的化合物:[M(L)n]m+ (Ay-)z (I),其中M代表Ru、Fe、Co、Rh、Ir、Ni、Os、Cr、Cu或Mn;A代表带有电荷y的阴离子基团,其中y为1至4,m为1至4,n为2至6,z为1至4,L是从式(ll)-(VII)的
配体中选择的
配体。在优选实施例中,
配体L为2-(苯基偶氮基)
吡啶或2,6-双(苯基偶氮基)
吡啶。式(I)的化合物可用于形成基于
金属配合物的低电位氧化还原活性
配体的抗性存储器件。本文还揭示了制造这类设备的方法及其用途。