A method for the formation of a silica film which comprises treating a film in a supercritical medium, the film comprising (A) a siloxane compound and (B) at least one member selected from the group consisting of (B-1) a compound compatible with or dispersible in ingredient (A) and having a boiling or decomposition temperature of from 150 to 500°C and (B-2) a surfactant. The silica film has excellent mechanical strength showing a dielectric constant of generally 2.2 or lower, and hence is useful as a dielectric film in semiconductor devices and the like.
一种形成
二氧化硅薄膜的方法,包括在超临界介质中处理薄膜,该薄膜包括(A)
硅氧烷化合物和(B)至少一种选自以下组别的成员:(B-1)与成分(A)相容或可分散在成分(A)中且沸腾或分解温度为 150 至 500°C 的化合物和(B-2)表面活性剂。
二氧化硅薄膜具有优异的机械强度,介电常数一般为 2.2 或更低,因此可用作半导体设备等的介电薄膜。