Methods of polishing, interconnect-fabrication, and producing semiconductor devices
申请人:Hitachi, Ltd.
公开号:US20020016073A1
公开(公告)日:2002-02-07
The present invention provides a technique to reduce and suppress scratches and delamination, to suppress and control the development of dishing and erosion, and to polish at high polishing rate. Polishing is performed using a polishing solution, which contains an oxidizer, phosphoric acid, organic acid, a chemical to form inhibition layer, and water.
本发明提供了一种减少和抑制划痕和分层、抑制和控制碟形和侵蚀的发展以及高抛光率抛光的技术。抛光时使用的抛光液含有氧化剂、磷酸、有机酸、形成抑制层的化学品和水。