申请人:Cabot Microelectronics Corporation
公开号:US20040152309A1
公开(公告)日:2004-08-05
The invention is directed to a method of polishing a silicon-containing dielectric layer involving the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of about 4 to about 6. The polishing additive comprises a functional group having a pK
a
of about 4 to about 9 and is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof. The invention is further directed to the chemical-mechanical polishing system, wherein the inorganic abrasive is ceria.
本发明涉及一种对含硅介电层进行抛光的方法,该方法涉及使用一种化学机械抛光系统,该系统包括(a)一种无机磨料、(b)一种抛光添加剂和(c)一种液体载体,其中抛光组合物的 pH 值约为 4 至 6。
a
为约 4 至约 9 的官能团,该官能团选自由芳胺、氨基醇、脂肪胺、杂环胺、羟肟酸、氨基羧酸、环状单羧酸、不饱和单羧酸、取代酚、磺酰胺、硫醇、其盐及其组合组成的组。本发明还涉及化学机械抛光系统,其中无机磨料为铈。