CO2 fixation into electron-deficient aromatic C–H bonds proceeds with the combined Brønsted bases LiO-t-Bu and LiO-t-Am/CsF/18-crown-6 (t-Am = CEtMe2) under a CO2 atmosphere to afford a variety of polyfunctionalized aromatic carboxylic acids.
在 CO 2气氛下,通过组合的布朗斯台德碱 LiO- t -Bu 和 LiO- t -Am/CsF/18-crown-6 ( t -Am = CEtMe 2 ) 将CO 2固定成缺电子芳族 C-H 键以提供多种多官能化芳族羧酸。
An Improved Sonogashira Coupling Procedure for the Construction of Rigid Aromatic Multifunctional Monomers Bearing 1,3-Substituted Acetylenic Units
作者:Louise Davidson、Keith W. Freebairn、Andrew T. Russell、Harish S. Trivedi、Wayne Hayes
DOI:10.1055/s-2002-19768
日期:——
The efficient synthesis of rigid multifunctional vinylic monomers 1 and 2 from 3,5-dibromobenzene derivatives and propargyl alcohol via the Sonogashirareaction is reported. For example, a series of 3,5-bis(3-hydroxyprop-1-ynl)benzoate ester derivatives have been prepared efficiently using an improved palladium catalyst system. Subsequent hydrolysis and reaction with 4-vinylaniline afforded a new monomer
[EN] P2X3, RECEPTOR ANTAGONISTS FOR TREATMENT OF PAIN<br/>[FR] ANTAGONISTES DU RÉCEPTEUR P2X3 UTILISÉS DANS LE TRAITEMENT DE LA DOULEUR
申请人:MERCK & CO INC
公开号:WO2009058298A1
公开(公告)日:2009-05-07
The subject invention relates to novel P2X3 receptor antagonists that play a critical role in treating disease states associated with pain, in particular peripheral pain, inflammatory pain, or tissue injury pain that can be treated using a P2X3 receptor subunit modulator.
Highly selective and efficient conversion of aryl bromides to t-butyl benzoates with di-t-butyl dicarbonate
作者:Hongmei Li、Jaume Balsells
DOI:10.1016/j.tetlet.2007.12.134
日期:2008.3
t-Butyl benzoates can be accessed from aromatic compounds bearing multiple halogen substituents via selective metal–halogen exchange with lithium tri-n-butylmagnesium ate complex followed by trapping with di-t-butyl dicarbonate.
Composition for film formation and material for insulating film formation
申请人:JSR CORPORATION
公开号:US20020172652A1
公开(公告)日:2002-11-21
A composition for film formation capable of forming a coating film excellent in low dielectric constant characteristics, cracking resistance, modulus of elasticity, and adhesion to substrates and useful as an interlayer insulating film material in semiconductor devices, etc. The composition for film formation contains (A) at least one member selected from an aromatic polyarylene and an aromatic poly (arylene ether), (B) a polyvinylsiloxane, and (C) an organic solvent.