ethenyl 3-(trifluoromethyl)benzoate | 1644148-21-9

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: ethenyl 3-(trifluoromethyl)benzoate
• CAS: 1644148-21-9
• 化学式: C₁₀H₇F₃O₂
• 分子量: 216.16
• InChiKey: RUSOPLRHOZEZPA-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.8
• 重原子数：
  15
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.1
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  5

反应信息

• 作为产物：
  描述：

  乙酸乙烯酯 、 在 potassium tert-butylate 作用下， 以 四氢呋喃 为溶剂， 以58%的产率得到ethenyl 3-(trifluoromethyl)benzoate
  参考文献：
  名称：

  乙醇酯转移反应：乙烯基酯的简便合成

  摘要：

  精心设计了一种简单有效的无乙酸乙烯酯转移反应，乙酸乙烯酯的收率中等至高。该反应通过产生乙烯乙酸钾来实现，然后使其与脂族，芳基和杂芳基酸的均酸酐和混合酸酐反应，得到相应的乙烯基酯。然后通过进行分子内的Heck反应来探测由此生成的乙烯基酯的效用，从而以优异的收率得到异苯并呋喃-1（3 H）-one衍生物。

  DOI：

  10.1002/hlca.201300396

文献信息

• PHOTO-CROSSLINKABLE MATERIAL FOR ORGANIC THIN FILM TRANSISTOR INSULATING LAYER
  申请人：Sumitomo Chemical Co., Ltd

  公开号：EP2479791A1

  公开（公告）日：2012-07-25

  A problem of the present invention is to provide an organic thin film transistor insulating layer material which is capable of forming a cross-linked structure without conducting a treatment at higher temperature, and which enables an organic thin film transistor to have a small absolute value of threshold voltage (Vth) when it is used for the formation of a gate insulating layer. The means for solving the problem is an organic thin film transistor insulating layer material including a macromolecular compound that has a repeating unit having a group containing a fluorine atom and a repeating unit having a photodimerization-reactive group. Preferred examples of the group containing a fluorine atom include an aryl group in which a hydrogen atom has been substituted with a fluorine atom and an alkylaryl group in which a hydrogen atom has been substituted with a fluorine atom, and particularly a phenyl group in which a hydrogen atom has been substituted with a fluorine atom and an alkylphenyl group in which a hydrogen atom has been substituted with a fluorine atom. Preferred examples of the photodimerization-reactive group include an aryl groups in which a hydrogen atom has been substituted with a halomethyl group, and particularly a phenyl group in which a hydrogen atom has been substituted with a halomethyl group.

  本发明的一个问题是提供一种有机薄膜晶体管绝缘层材料，该材料能够在不进行高温处理的情况下形成交联结构，并使有机薄膜晶体管在用于形成栅极绝缘层时具有较小的阈值电压（Vth）绝对值。解决该问题的方法是一种有机薄膜晶体管绝缘层材料，包括一种大分子化合物，其重复单元具有一个含氟原子的基团和一个具有光二聚化反应基团的重复单元。含氟原子基团的优选实例包括氢原子被氟原子取代的芳基和氢原子被氟原子取代的烷芳基，特别是氢原子被氟原子取代的苯基和氢原子被氟原子取代的烷基苯基。光二聚化反应基团的优选实例包括氢原子被卤代甲基取代的芳基，特别是氢原子被卤代甲基取代的苯基。
• RESIN COMPOSITION FOR INSULATING LAYER
  申请人：Yahagi Isao

  公开号：US20120053287A1

  公开（公告）日：2012-03-01

  The problem to be solved is to provide a resin composition for an organic thin film transistor insulating layer which can cross-link without being subjected to a treatment at a high temperature for a long time to form an insulating layer excellent in surface adhesion property. The solving means is a resin composition for an organic thin film transistor insulating layer comprising (A) a macromolecular compound comprising a repeating unit having a photosensitive group s linked through a urea bond or a urethane bond, (B) a curing agent and (C) an organic solvent.
• Ethenolate Transfer Reactions: A Facile Synthesis of Vinyl Esters
  作者：Srinivasan Kaliyaperumal Appaye、Satish Pandurang Nikumbh、Rajeshwar Reddy Govindapur、Shyamapada Banerjee、Dinesh S. Bhalerao、Unniaran K. Syam Kumar

  DOI：10.1002/hlca.201300396

  日期：2014.8

  and efficient metal‐free ethenolate transfer reaction has been elaborated in moderate‐to‐high yields from vinyl acetate. This reaction was accomplished by generation of potassium ethenolate, which was then reacted with homo and mixed anhydrides of aliphatic, aryl and heteroaryl acids, to yield the corresponding vinyl esters. The utility of thus generated vinyl esters was then probed by carrying out intramolecular

  精心设计了一种简单有效的无乙酸乙烯酯转移反应，乙酸乙烯酯的收率中等至高。该反应通过产生乙烯乙酸钾来实现，然后使其与脂族，芳基和杂芳基酸的均酸酐和混合酸酐反应，得到相应的乙烯基酯。然后通过进行分子内的Heck反应来探测由此生成的乙烯基酯的效用，从而以优异的收率得到异苯并呋喃-1（3 H）-one衍生物。