1-methylcyclohexyl phenyl ether | 918158-41-5

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯酚醚
• 英文名称: 1-methylcyclohexyl phenyl ether
• 英文别名: [(1-Methylcyclohexyl)oxy]benzene；(1-methylcyclohexyl)oxybenzene
• CAS: 918158-41-5
• 化学式: C₁₃H₁₈O
• 分子量: 190.285
• InChiKey: MTQJWSUKQUDUQB-UHFFFAOYSA-N

物化性质

• 沸点：
  265.9±9.0 °C(Predicted)
• 密度：
  0.978±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  3.9
• 重原子数：
  14
• 可旋转键数：
  2
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.54
• 拓扑面积：
  9.2
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为产物：
  描述：

  fluorotetraphenylbismuth 、 1-甲基环己醇 在 copper diacetate N-甲基二环己基胺 作用下， 以 甲苯 为溶剂， 反应 1.0h， 以87%的产率得到1-methylcyclohexyl phenyl ether
  参考文献：
  名称：

  铜 (II) 催化的醇与有机铋 (V) 试剂的 O-苯基化：一种合成简单叔烷基苯基醚的简便方法

  摘要：

  描述了在温和条件下铜 (II) 催化的简单醇与有机铋 (V) 化合物的 O-苯基化的方便方法。在催化量的醋酸铜存在下，用各种简单醇处理四苯基氟化铋 (Ph 4 BiF) 以良好的收率得到相应的苯基醚，该反应成功地应用于各种叔烷基苯基醚的制备。

  DOI：

  10.1246/cl.2006.1140

文献信息

• QUATERNARY AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING A RESIST UNDER LAYER FILM, AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20150357204A1

  公开（公告）日：2015-12-10

  A quaternary ammonium salt compound is represented by the following formula (A-1), wherein, R 1 , R 2 , and R 3 each represent an alkyl group, an alkenyl group, an aryl group, or an aralkyl group, a part or all of hydrogen atoms in these groups may be substituted by a hydroxyl group(s), an alkoxy group(s), or a halogen atom(s), and these groups may include one or more of a carbonyl group and an ester bond; R 4 represents a single bond, an alkylene group, an alkenylene group, an arylene group, or an aralkylene group, a part or all of hydrogen atoms in these groups may be substituted by an alkoxy group(s) or a halogen atom(s), and these groups may include one or more of an ether bond, a carbonyl group, an ester bond, and an amide bond; and A − represents a non-nucleophilic counter ion.

  一个四元铵盐化合物由以下式（A-1）表示，其中，R1、R2和R3分别代表烷基、烯基、芳基或芳基烷基，这些基团中的氢原子的一部分或全部可以被羟基、烷氧基或卤原子取代，这些基团中可能包括一个或多个羰基和酯键；R4代表一个单键、烷基、烯基、芳基或芳基烷基，这些基团中的氢原子的一部分或全部可以被烷氧基或卤原子取代，这些基团中可能包括一个或多个醚键、羰基、酯键和酰胺键；A−代表一个非亲核对离子。
• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION
  申请人：INASAKI Takeshi

  公开号：US20130004888A1

  公开（公告）日：2013-01-03

  An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition that can form independent line patterns with high resolution and excellent shapes and shows excellent resist performances including roughness characteristics, and to provide an actinic ray-sensitive or radiation-sensitive film and a pattern forming method using the composition. The actinic ray-sensitive or radiation-sensitive resin composition contains a compound (P) that contains at least one phenolic hydroxyl group and at least one group in which a hydrogen atom of a phenolic hydroxyl group is substituted with a group represented by the following General Formula (1) (the respective symbols in the formula represent the same definitions as in the claims and the specification).

  本发明的目的是提供一种光致或辐射致敏树脂组合物，该组合物可以形成具有高分辨率和优秀形状的独立线型图案，并显示出包括粗糙特性在内的优异的抗阻性能，以及提供使用该组合物的光致或辐射致敏膜和图案形成方法。光致或辐射致敏树脂组合物包含一种化合物（P），该化合物含有至少一个酚羟基和至少一个氢原子被代表如下通式（1）的基团取代的酚羟基的基团（式中各符号与权利要求书和说明书中的定义相同）。
• Preparation of alpha-hydroxyketones
  申请人：BASF SE

  公开号：EP1930309B1

  公开（公告）日：2009-10-21
• Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2628744B1

  公开（公告）日：2016-11-30
• COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS USING THE SAME
  申请人：OGIHARA Tsutomu

  公开号：US20130005150A1

  公开（公告）日：2013-01-03

  The invention provides a composition for forming a silicon-containing resist underlayer film comprising: (A) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (1) and one or more hydrolysable compound shown by the following general formula (2), and (B) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (3) and one or more hydrolysable silicon compound shown by the following general formula (4). There can be provided a composition for forming a resist underlayer film applicable not only to a resist pattern obtained in a negative development but also to a resist pattern obtained in a conventional positive development, and a patterning process using this composition. R 1 m1 R 2 m2 R 3 m3 Si(OR) (4-m1-m2-m3) (1) U(OR 4 ) m4 (OR 5 ) m5 (2) R 6 m6 R 7 m7 R 8 m8 Si(OR 9 ) (4-m6-m7-m8) (3) Si(OR 10 ) 4 (4)