2-(2-Hydroxyethoxy)ethanol;propanoic acid | 64080-47-3

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: 2-(2-Hydroxyethoxy)ethanol;propanoic acid
• 英文别名: 2-(2-hydroxyethoxy)ethanol;propanoic acid
• CAS: 64080-47-3
• 化学式: C7H16O5
• 分子量: 180.2
• InChiKey: OSGGKQPLXCAWLF-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.53
• 重原子数：
  12
• 可旋转键数：
  5
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.86
• 拓扑面积：
  87
• 氢给体数：
  3
• 氢受体数：
  5

文献信息

• ACTIVE ENERGY RAY-CURABLE INKJET INK
  申请人：Toyo Ink SC Holdings Co., Ltd.

  公开号：EP3124561A1

  公开（公告）日：2017-02-01

  An active energy ray-curable inkjet ink comprising an organic solvent having a boiling point of 140°C to 300°C, and a polymerizable monomer containing 2-(2-vinyloxyethoxy)ethyl acrylate, wherein a content of the organic solvent is from 0.1 to 10% by weight with reference to the total weight of the ink, is provided. The ink has extremely high curability and discharge stability, and excellent adhesion to various base materials.

  本发明提供了一种主动能射线固化喷墨墨水，它由沸点为 140°C 至 300°C 的有机溶剂和含有 2-(2-乙烯氧基乙氧基)丙烯酸乙酯的可聚合单体组成，其中有机溶剂的含量为墨水总重量的 0.1%至 10%（按重量计）。该油墨具有极高的固化性和放电稳定性，对各种基底材料具有极佳的附着力。
• Adhesive composition
  申请人：SUMITOMO CHEMICAL COMPANY, LIMITED

  公开号：EP0063037B1

  公开（公告）日：1985-09-25
• Ink for electrochromic device and electrochromic device and method of manufacturing the same
  申请人：Samsung Electronics Co., Ltd.

  公开号：EP2465906B1

  公开（公告）日：2015-05-06
• ELECTROCHROMIC MATERIAL AND ELECTROCHROMIC DEVICE INCLUDING THE SAME
  申请人：NOH Chang-Ho

  公开号：US20110235151A1

  公开（公告）日：2011-09-29

  An electrochromic material including a metal-organic framework including a metal, and an organic compound including a functional group, wherein the organic compound forms a coordination complex with the metal.
• SOLUTION COMPOSITION FOR FORMING OXIDE THIN FILM AND ELECTRONIC DEVICE INCLUDING THE OXIDE THIN FILM
  申请人：Samsung Electronics Co., Ltd.

  公开号：US20130036943A1

  公开（公告）日：2013-02-14

  A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.