(2S)-3-[Bis(carboxymethyl)amino]-2-hydroxypropanoic acid | 206053-39-6

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: (2S)-3-[Bis(carboxymethyl)amino]-2-hydroxypropanoic acid
• 英文别名: (2S)-3-[bis(carboxymethyl)amino]-2-hydroxypropanoic acid
• CAS: 206053-39-6
• 化学式: C₇H₁₁NO₇
• 分子量: 221.16
• InChiKey: ODAKQJVOEZMLOD-BYPYZUCNSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -3.9
• 重原子数：
  15
• 可旋转键数：
  7
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.57
• 拓扑面积：
  135
• 氢给体数：
  4
• 氢受体数：
  8

文献信息

• Polishing Composition For Silicon Wafer
  申请人：Kashima Yoshiyuki

  公开号：US20080115423A1

  公开（公告）日：2008-05-22

  The present invention relates to a polishing composition for silicon wafer comprising silica; a basic compound; at least one compound selected from the group consisting of amino acid derivatives represented by formula (1) wherein R 1 , R 2 and R 3 are identical or different one another, C 1-12 alkylene group that may be substituted by hydroxyl group, carboxyl group, phenyl group or amino group, and formula (2) wherein R 4 and R 5 are identical or different each other, hydrogen atom, or C 1-12 alkyl group that may be substituted by hydroxyl group, carboxyl group, phenyl group or amino group, with a proviso that both R 4 and R 5 are not hydrogen at the same time, and R 6 is C 1-12 alkylene group that may be substituted by hydroxyl group, carboxyl group, phenyl group or amino group, and the salts of the amino acid derivatives; and water. The polishing composition can prevent metal contamination, particularly copper contamination in polishing of silicon wafer.