COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20210026246A1
公开(公告)日:2021-01-28
A composition for forming a silicon-containing resist underlayer film includes: a thermosetting silicon-containing material containing any one or more of a partial structure shown by the general formula (Sx-1), (Sx-2), and (Sx-3); and a compound shown by the general formula (P-0), where R
1
represents an organic group that has or generates a silanol group, a hydroxy group, or a carboxy group; R
2
and R
3
are each independently the same as R
1
or each represent a hydrogen atom or a monovalent substituent having 1 to 30 carbon atoms; R
100
represents a divalent organic group substituted with a fluorine atom; R
101
and R
102
each independently represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; R
103
represents a divalent hydrocarbon group having 1 to 20 carbon atoms; and L
104
represents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms.