There is provided a film with reduced formation of an edge reservoir at a periphery of a film in which the edge reservoir causes an unnecessary residue that cannot be removed by an etching process, and a method for forming the film. A film forming composition for use in a lithography process, the film forming composition comprising a surfactant containing a polymer and an oligomer having a C3-5 perfluoroalkyl partial structure. The perfluoroalkyl partial structure preferably has a carbon number of 4. The perfluoroalkyl partial structure may further include an alkyl partial structure, and the polymer and the oligomer are preferably a (meth)acrylate polymer and a (meth)acrylate oligomer, respectively. The surfactant is contained in an amount of 0.0001% by mass to 1.5% by mass based on the total solid content of the film forming composition. The film forming composition further comprises a coating film resin, and the coating film resin is a novolac resin, a condensation epoxy resin, a (meth)acylic resin, a polyether-based resin, or a silicon-containing resin, etc. The formed film can be used as a resist underlayer film or a resist overlayer film.
本发明提供了一种可减少在薄膜外围形成边缘储层的薄膜,在这种薄膜中,边缘储层会造成无法通过蚀刻工艺去除的不必要残留物,本发明还提供了一种用于形成该薄膜的方法。一种用于光刻工艺的成膜组合物,该成膜组合物包含一种表面活性剂,其中含有一种聚合物和一种具有 C3-5
全氟烷基部分结构的低聚物。
全氟烷基部分结构的碳原子数最好为 4。
全氟烷基部分结构可进一步包括烷基部分结构,聚合物和低聚物最好分别为(甲基)
丙烯酸酯聚合物和(甲基)
丙烯酸酯低聚物。根据成膜组合物的总固体含量,表面活性剂的含量为 0.0001%(质量百分比)至 1.5%(质量百分比)。成膜组合物还包括涂膜
树脂,涂膜
树脂为
酚醛
树脂、缩合环氧
树脂、(甲基)酰基
树脂、聚醚基
树脂或含
硅树脂等。形成的薄膜可用作抗蚀剂底层薄膜或抗蚀剂覆盖层薄膜。