Nonafluoro-tert-butyl isobutyrate | 914637-43-7

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: Nonafluoro-tert-butyl isobutyrate
• 英文别名: [1,1,1,3,3,3-hexafluoro-2-(trifluoromethyl)propan-2-yl] 2-methylpropanoate
• CAS: 914637-43-7
• 化学式: C₈H₇F₉O₂
• 分子量: 306.13
• InChiKey: SYZHJJUWVLPDLN-UHFFFAOYSA-N

物化性质

• 沸点：
  98.2±40.0 °C(Predicted)
• 密度：
  1.432±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  4.4
• 重原子数：
  19
• 可旋转键数：
  3
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.88
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  11

文献信息

• Metal-compound-removing solvent and method in lithography
  申请人：Taiwan Semiconductor Manufacturing Co., Ltd.

  公开号：US10622211B2

  公开（公告）日：2020-04-14

  A wafer is rinsed with a solvent. The wafer has an increased hydrophobicity as a result of being rinsed with the solvent. A metal-containing material is formed over the wafer after the wafer has been rinsed with the solvent. One or more lithography processes are performed at least in part using the metal-containing material. The metal-containing material is removed during or after the performing of the one or more lithography processes. The increased hydrophobicity of the wafer facilitates a removal of the metal-containing material.

  用溶剂冲洗晶片。由于用溶剂冲洗，晶片的疏水性增加。用溶剂冲洗晶片后，在晶片上形成含金属材料。至少部分使用含金属材料进行一个或多个光刻过程。在执行一个或多个光刻过程期间或之后，含金属材料被移除。晶片疏水性的增加有利于去除含金属材料。
• METAL-COMPOUND-REMOVING SOLVENT AND METHOD IN LITHOGRAPHY
  申请人：Taiwan Semiconductor Manufacturing Co., Ltd.

  公开号：US20180040474A1

  公开（公告）日：2018-02-08

  A wafer is rinsed with a solvent. The wafer has an increased hydrophobicity as a result of being rinsed with the solvent. A metal-containing material is formed over the wafer after the wafer has been rinsed with the solvent. One or more lithography processes are performed at least in part using the metal-containing material. The metal-containing material is removed during or after the performing of the one or more lithography processes. The increased hydrophobicity of the wafer facilitates a removal of the metal-containing material.