2-Cyclohexyl-2-propyl formate | 63574-01-6

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: 2-Cyclohexyl-2-propyl formate
• 英文别名: 2-cyclohexylpropan-2-yl formate
• CAS: 63574-01-6
• 化学式: C₁₀H₁₈O₂
• 分子量: 170.25
• InChiKey: KHSUHPZEMHPXSV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.1
• 重原子数：
  12
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.9
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  2

文献信息

• Chemical amplification type resist composition
  申请人：Yamada Airi

  公开号：US20080269506A1

  公开（公告）日：2008-10-30

  The present invention provides a sulfonium salt of the formula (Ia) a polymeric compound comprising a structural unit of the formula (Ib) and a chemical amplification type positive resist composition comprising (A) an acid generator comprising at least one compound selected from the group consisting of a sulfonium salt of the formula (Ia), a polymeric compound comprising a structural unit of the formula (Ib), and a sulfonium salt of the formula (Ic); and (B) resin which contains a structural unit having an acid labile group and which itself is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid.

  本发明提供了一种公式(Ia)的硫鎓盐，包括一个结构单元的聚合物化合物的公式(Ib)，以及一种化学放大型正性光刻胶组合物，包括(A)至少选择自硫鎓盐的公式(Ia)、一个结构单元的聚合物化合物的公式(Ib)和硫鎓盐的公式(Ic)组成的酸发生剂；以及(B)含有酸敏感基团的结构单元的树脂，本身在碱性水溶液中不溶或难溶，但在酸的作用下变得可溶于碱性水溶液。
• Chemically amplified resist, polymer for the chemically amplified resist, monomer for the polymer and method for transferring pattern to chemically amplified resist layer
  申请人：NEC CORPORATION

  公开号：US20030224297A1

  公开（公告）日：2003-12-04

  Chemically amplified resist is produced on the basis of vinyl polymer having 3-oxo-4-oxabicyclo[3.2.1]octane-2-yl group expressed by general formula (1) 1 where each of L 1 , L 2 , L 3 , L 4 , L 5 and L 6 is selected from the group consisting of hydrogen atom and alkyl groups having the carbon number from 1 to 8, and the hydrogen atom and/or the alkyl group at L 5 and L 6 are replaced with alkylene groups having the carbon number from 1 to 10 and bonded to each other for forming a ring so that the resist exhibits high transparency to light equal to or less than 220 nm wavelength, large resistance against dry etching and good adhesion to substrates.

  化学增感型光刻胶是基于含有3-氧代-4-氧杂双环[3.2.1]辛烷-2-基基团的乙烯基聚合物制备的，其通式为（1）1，其中L1、L2、L3、L4、L5和L6中的每个都选择自氢原子和碳数为1到8的烷基组成的群，L5和L6的氢原子和/或烷基被具有碳数为1到10的亚烷基替换，并相互键合形成环，以使光刻胶具有高于或等于220纳米波长的光透明度，对干法刻蚀具有较大的抗性，并且对基底有良好的附着力。
• Monomer having fluorine-containing acetalor ketal structure, polymer thereof, and chemical-amplification-type resist composition as well as process for formation of pattern with use of the same
  申请人：Maeda Katsumi

  公开号：US20050164119A1

  公开（公告）日：2005-07-28

  As a polymer exhibiting improved transparency which is suitable for a resist resin used in a chemical-amplification-type resist being applicable for photolithography using exposure light at 180 nm or shorter, this invention provides a polymer comprising a repeating unit resulting from polymerization of a monomer exhibiting a polymerization activity, wherein the monomer has a fluorine-containing acetal or ketal structure represented by general formula (1): wherein R represents an atomic group containing a carbon-carbon double bond exhibiting polymerization activity; at least one of R 1 and R 2 is fluorinated alkyl group or fluorinated aryl group having 1 to 20 carbon atoms; and R 3 represents a radical selected from the group consisting of hydrogen atom, alkyl group, alkoxy-substituted alkyl group, fluorinated alkyl group, aryl group, fluorinated aryl group, aralkyl group and fluorinated aralkyl group having 1 to 20 carbon atoms.

  本发明提供了一种透明度改善的聚合物，适用于化学放大型光刻胶中使用的抗性树脂，可用于在180纳米或更短波长的曝光光下进行光刻。该聚合物包括由具有聚合活性的单体聚合得到的重复单元，其中该单体具有由通式（1）表示的含氟缩醛或缩酮结构： 其中，R表示含有聚合活性的碳碳双键的原子基团；R1和R2中至少一个是具有1至20个碳原子的含氟烷基或含氟芳基；R3表示从氢原子、烷基、烷氧基取代的烷基、含氟烷基、芳基、含氟芳基、芳基烷基和含氟芳基烷基等基团中选择的一个基团。
• Chemically amplified positive resist composition
  申请人：Takemoto Ichiki

  公开号：US20060160017A1

  公开（公告）日：2006-07-20

  The present invention provides a chemically amplified positive resist composition comprising (i) a polymer which is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid, (ii) an acid generator, and (iii) a compound of the formula (I). The present invention also provides an ester derivative useful as a component of the chemically amplified positive resist composition, and process for producing the ester derivative.

  本发明提供了一种化学增感正性光刻胶组合物，包括(i)一种在碱性水溶液中不溶或难溶，但在酸的作用下变为可溶于碱性水溶液的聚合物，(ii)一种酸发生剂，以及(iii)式(I)的化合物。本发明还提供了一种酯衍生物，可用作化学增感正性光刻胶组合物的组分，以及制备酯衍生物的方法。
• Chemical amplified resist, polymer for the chemically amplified resist, monomer for the polymer and method for transferring pattern to chemically amplified resist layer
  申请人：NEC CORPORATION

  公开号：US20030097008A1

  公开（公告）日：2003-05-22

  Chemically amplified resist is produced on the basis of vinyl polymer having 3-oxo-4-oxabicyclo [3.2.1 ]octane-2-yl group expressed by general formula (1) 1 where each of L 1 , L 2 , L 3 , L 4 , L 5 and L 6 is selected from the group consisting of hydrogen atom and alkyl groups having the carbon number from 1 to 8, and the hydrogen atom and/or the alkyl group at L 5 and L 6 are replaced with alkylene groups having the carbon number from 1 to 10 and bonded to each other for forming a ring so that the resist exhibits high transparency to light equal to or less than 220 nm wavelength, large resistance against dry etching and good adhesion to substrates.

  化学增感型光刻胶是基于含有3-氧代-4-氧杂双环[3.2.1]辛烷-2-基基团的乙烯基聚合物制备的，该基团由通式（1）表示，其中L1、L2、L3、L4、L5和L6中的每一个均选自于氢原子和碳数为1至8的烷基组成的群体，且在L5和L6处的氢原子和/或烷基被替换为碳数为1至10的亚烷基组，它们彼此相连形成环，以使光刻胶对小于或等于220纳米波长的光具有高透明度，对干法刻蚀具有较大的抵抗力，并且与基底有良好的附着性。