[3-Methyl-3-(2-sulfanylacetyl)oxybutyl] 2-sulfanylacetate | 864679-76-5

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: [3-Methyl-3-(2-sulfanylacetyl)oxybutyl] 2-sulfanylacetate
• CAS: 864679-76-5
• 化学式: C₉H₁₆O₄S₂
• 分子量: 252.356
• InChiKey: PSICLYNYOJKEMN-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.6
• 重原子数：
  15
• 可旋转键数：
  8
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.78
• 拓扑面积：
  54.6
• 氢给体数：
  2
• 氢受体数：
  6

反应信息

• 作为产物：
  描述：

  在 水 、 碳酸氢钠 作用下， 以 甲醇 为溶剂， 生成 [3-Methyl-3-(2-sulfanylacetyl)oxybutyl] 2-sulfanylacetate
  参考文献：
  名称：

  RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER

  摘要：

  提供一种抗蚀聚合物，其由一个具有结构式（1）或（2）所表示的酸分解单元作为结构单元，能够在DUV准分子激光微影或类似工艺中表现出小的线边粗糙度并产生少量缺陷。在式（1）和（2）中，n表示2至24的整数；J表示单键或二价碳氢基团，当n=2时可以具有取代基/杂原子，或者当n≥3时可以表示n价碳氢基团，可以具有取代基/杂原子；E表示聚合终止剂、链转移剂或聚合引发剂的残基；K1和K2分别表示至少选择自烷基、环烷基、氧烷基、芳烃、二价噻唑环、二价噁唑环和二价咪唑环中的至少一种；L1和L2分别表示至少选择自—C（O）O—、—C（O）—和—OC（O）—中的至少一种；M1、M2和M3分别表示至少选择自烷基、环烷基、氧烷基和芳烃中的至少一种；Y、Y1和Y2分别表示酸分解键；k1、k2、l1、l2、m1、m2和m3分别表示0或1；R1表示H或甲基基团。

  公开号：

  US20090198065A1

文献信息

• Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer
  申请人：Momose Hikaru

  公开号：US20070190449A1

  公开（公告）日：2007-08-16

  To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K 1 and K 2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L 1 and L 2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M 1 , M 2 and M 3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y 1 and Y 2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, m3 and n1 each represent 0 or 1; and R 1 represents H or a methyl group.
• POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME
  申请人：Kato Takayuki

  公开号：US20100203451A1

  公开（公告）日：2010-08-12

  Provided is a positive resist composition using a resin having, in the polymer main chain, a specific acid decomposable structure and further having, in the side chain thereof, several specific acid decomposable groups, satisfactory in an exposure latitude, a focus latitude, and pattern collapse prevention at a high level, and having reduced development defects; and a pattern forming method.
• US7955780B2
  申请人：——

  公开号：US7955780B2

  公开（公告）日：2011-06-07
• US8049042B2
  申请人：——

  公开号：US8049042B2

  公开（公告）日：2011-11-01
• US8241829B2
  申请人：——

  公开号：US8241829B2

  公开（公告）日：2012-08-14