申请人:KAMIMURA Tetsuya
公开号:US20110244684A1
公开(公告)日:2011-10-06
Provided is a polishing liquid which is used for chemical mechanical polishing of a body to be polished having a layer containing polysilicon or a modified polysilicon, and using which the polishing rate of a layer containing a silicon-based material other than polysilicon is high and polishing of the layer containing polysilicon can be selectively suppressed. The polishing liquid includes components (A), (B), and (C), has a pH of from 1.5 to 7.0, and is capable of selectively polishing a second layer with respect to a first layer: (A) colloidal silica particles having a negative ζ potential; (B) phosphoric acid or an organic phosphonic acid compound represented by the following Formula (1) or (2); and (C) an anionic surfactant having at least one group represented by the following Formulae (I) to (IV):
R
2
—C(R
3
)
3-a
—(PO
3
H
2
)
a
Formula (1):
R
4
—N(R
5
)
m
—(CH
2
—PO
3
H
2
)
n
Formula (2):
—PO
3
X
2
Formula (I):
—OPO
3
X
2
Formula (II):
—COOX Formula (III):
—SO
3
X Formula (IV).