2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-Pentadecafluoro-1-octanesulfonic acid | 812-79-3

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 有机磺酸及其衍生物
• 英文名称: 2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-Pentadecafluoro-1-octanesulfonic acid
• 英文别名: 2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadecafluorooctane-1-sulfonic acid
• CAS: 812-79-3
• 化学式: C₈H₃F₁₅O₃S
• 分子量: 464.15
• InChiKey: FSVJFJWJQWUNCW-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.3
• 重原子数：
  27
• 可旋转键数：
  7
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  62.8
• 氢给体数：
  1
• 氢受体数：
  18

文献信息

• ETCHANT FOR SILICON WAFER SURFACE SHAPE CONTROL AND METHOD FOR MANUFACTURING SILICON WAFERS USING THE SAME
  申请人：Koyata Sakae

  公开号：US20090042390A1

  公开（公告）日：2009-02-12

  It is possible to reduce workloads of a both-side simultaneous polishing process or a single-side polishing process, and to achieve both of the maintenance of the wafer flatness and the reduction in wafer front side roughness upon completing a flattening process. A method for manufacturing silicon wafers according to the present invention includes a flattening process 13 of grinding or lapping front and back sides of a thin disc-shaped silicon wafer obtained by slicing a silicon single crystal ingot, an etching process of immersing the silicon wafer in an etchant for controlling a silicon wafer surface shape in which a fluorochemical surfactant is uniformly mixed in an alkaline aqueous solution to etch the front and back sides of the silicon wafer, and a both-side simultaneous polishing process 16 of simultaneously polishing the front and back sides of the etched silicon wafer or a single-side polishing process of polishing the front and back sides of the etched wafer for every side, in this order.