ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PHOTOMASK, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, COMPOUND, AND METHOD FOR PRODUCING COMPOUND
申请人:FUJIFILM Corporation
公开号:US20160280621A1
公开(公告)日:2016-09-29
The composition contains an alkali-soluble resin and a crosslinking agent that is represented by the following General Formula (I). In the formula, each of R
1
and R
6
independently represents a hydrogen atom or a hydrocarbon group having 5 or less carbon atoms; each of R
2
and R
5
independently represents an alkyl group, a cycloalkyl group, an aryl group, or an acyl group; and each of R
3
and R
4
independently represents a hydrogen atom or an organic group having 2 or more carbon atoms, and R
3
and R
4
may be bonded to each other to form a ring.
A monomer of formula (1) is provided wherein R
1
is hydrogen or a monovalent C
1
-C
6
hydrocarbon group, and R
2
is a group having polymerization functionality. Using the monomer, crosslinking units can be incorporated into a polymer chain. A chemically amplified negative resist composition comprising a base polymer having crosslinking units incorporated therein has a high sensitivity and forms a resist pattern with minimized LER.
A monomer of formula (1) is provided wherein R1 is hydrogen or a monovalent C1-C6 hydrocarbon group, and R2 is a group having polymerization functionality. Using the monomer, crosslinking units can be incorporated into a polymer chain. A chemically amplified negative resist composition comprising a base polymer having crosslinking units incorporated therein has a high sensitivity and forms a resist pattern with minimized LER.
Chemically amplified negative resist composition and patterning process
申请人:Shin-Etsu Chemical Co., Ltd.
公开号:EP2492746B1
公开(公告)日:2019-11-20
POLYMER, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, AND PATTERNING PROCESS
申请人:Masunaga Keiichi
公开号:US20120028190A1
公开(公告)日:2012-02-02
A polymer is provided comprising recurring units having a N,N′-bis(alkoxymethyl)tetrahydropyrimidinone or N,N′-bis(hydroxymethyl)tetrahydropyrimidinone structure on a side chain. When a chemically amplified negative resist composition is formulated using the polymer and processed by lithography, a fine resist pattern can be formed with the advantages of improved LER and high resolution.