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1 ,3-bismethoxymethyl-2-oxohexahydropyrimidin-5-ylmethacrylate | 1355393-89-3

中文名称
——
中文别名
——
英文名称
1 ,3-bismethoxymethyl-2-oxohexahydropyrimidin-5-ylmethacrylate
英文别名
[1,3-Bis(methoxymethyl)-2-oxo-1,3-diazinan-5-yl] 2-methylprop-2-enoate
1 ,3-bismethoxymethyl-2-oxohexahydropyrimidin-5-ylmethacrylate化学式
CAS
1355393-89-3
化学式
C12H20N2O5
mdl
——
分子量
272.301
InChiKey
VSCWJBGMEGPRHT-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    0.3
  • 重原子数:
    19
  • 可旋转键数:
    7
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.67
  • 拓扑面积:
    68.3
  • 氢给体数:
    0
  • 氢受体数:
    5

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为产物:
    描述:
    氯甲基甲基醚 在 sodium iodide 、 N,N-二异丙基乙胺 作用下, 以 乙腈 为溶剂, 以51%的产率得到1 ,3-bismethoxymethyl-2-oxohexahydropyrimidin-5-ylmethacrylate
    参考文献:
    名称:
    Polymer, chemically amplified negative resist composition, and patterning process
    摘要:
    公开号:
    EP2412733B1
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文献信息

  • ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PHOTOMASK, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, COMPOUND, AND METHOD FOR PRODUCING COMPOUND
    申请人:FUJIFILM Corporation
    公开号:US20160280621A1
    公开(公告)日:2016-09-29
    The composition contains an alkali-soluble resin and a crosslinking agent that is represented by the following General Formula (I). In the formula, each of R 1 and R 6 independently represents a hydrogen atom or a hydrocarbon group having 5 or less carbon atoms; each of R 2 and R 5 independently represents an alkyl group, a cycloalkyl group, an aryl group, or an acyl group; and each of R 3 and R 4 independently represents a hydrogen atom or an organic group having 2 or more carbon atoms, and R 3 and R 4 may be bonded to each other to form a ring.
    该组合物包含一种碱溶性树脂和一种由下列通式(I)表示的交联剂。在该式中,R1和R6各自独立地表示氢原子或具有5个或更少碳原子的碳氢基团;R2和R5各自独立地表示烷基、环烷基、芳基或酰基;R3和R4各自独立地表示氢原子或具有2个或更多碳原子的有机基团,且R3和R4可以结合形成环。
  • POLYMERIZABLE MONOMERS
    申请人:Domon Daisuke
    公开号:US20120029193A1
    公开(公告)日:2012-02-02
    A monomer of formula (1) is provided wherein R 1 is hydrogen or a monovalent C 1 -C 6 hydrocarbon group, and R 2 is a group having polymerization functionality. Using the monomer, crosslinking units can be incorporated into a polymer chain. A chemically amplified negative resist composition comprising a base polymer having crosslinking units incorporated therein has a high sensitivity and forms a resist pattern with minimized LER.
    提供了一个式子为(1)的单体,其中R1是氢或一价的C1-C6碳氢基团,R2是具有聚合功能的基团。使用这种单体,可以将交联单元并入聚合物链中。具有交联单元的基聚合物的化学放大负性光阻组合物具有高灵敏度,并形成具有最小LER的光阻图案。
  • Polymerizable monomers
    申请人:Shin-Etsu Chemical Co., Ltd.
    公开号:EP2413192A1
    公开(公告)日:2012-02-01
    A monomer of formula (1) is provided wherein R1 is hydrogen or a monovalent C1-C6 hydrocarbon group, and R2 is a group having polymerization functionality. Using the monomer, crosslinking units can be incorporated into a polymer chain. A chemically amplified negative resist composition comprising a base polymer having crosslinking units incorporated therein has a high sensitivity and forms a resist pattern with minimized LER.
    提供了式 (1) 单体,其中 R1 是氢或一价 C1-C6 烃基,R2 是具有聚合官能度的基团。使用该单体可将交联单元加入聚合物链中。化学放大阴性抗蚀剂组合物由含有交联单元的基础聚合物组成,具有高灵敏度,可形成具有最小 LER 的抗蚀图案。
  • Chemically amplified negative resist composition and patterning process
    申请人:Shin-Etsu Chemical Co., Ltd.
    公开号:EP2492746B1
    公开(公告)日:2019-11-20
  • POLYMER, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, AND PATTERNING PROCESS
    申请人:Masunaga Keiichi
    公开号:US20120028190A1
    公开(公告)日:2012-02-02
    A polymer is provided comprising recurring units having a N,N′-bis(alkoxymethyl)tetrahydropyrimidinone or N,N′-bis(hydroxymethyl)tetrahydropyrimidinone structure on a side chain. When a chemically amplified negative resist composition is formulated using the polymer and processed by lithography, a fine resist pattern can be formed with the advantages of improved LER and high resolution.
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