申请人:NISSAN CHEMICAL CORPORATION
公开号:US20220026806A1
公开(公告)日:2022-01-27
A composition for forming a protective film having excellent resistance to a wet etching solution for semiconductors during a lithographic process in the manufacture of semiconductors; a method of forming a resist pattern using said protective film; and a method for manufacturing a semiconductor device. This composition for forming a protective film against a wet etching solution for semiconductors includes: a compound or polymer which contains at least one among an acetal structure and an amide structure; and a solvent. The polymer is preferably a copolymer of: a compound (a) containing at least one acetal structure in a molecule; and a compound (b) containing at least one amide structure in a molecule.