Diethynylbenzene-Based Liquid Crystalline Semiconductor for Solution-Processable Organic Thin-Film Transistors
作者:Pramod Kandoth Madathil、Benoît Heinrich、Bertrand Donnio、Fabrice Mathevet、Jean-Louis Fave、Daniel Guillon、Andre-Jean Attias、Changjin Lee、Tae-Dong Kim、Kwang-Sup Lee
DOI:10.1166/jnn.2010.2947
日期:2010.10.1
We report here the synthesis and characterization of novel diethynylbenzene-based liquid crystalline semiconductor (P1) for organic thin-film transistors (OTFTs). Compound P1 was synthesized by the Sonogashira coupling reaction between 2-bromo-5-(4-hexylthiophen-2-yl)thieno[3,2-b]thiophene and 1,4-bis(dodecyloxy)-2,5-diethynylbenzene. Top contact OTFTs were fabricated by spin casting with 2 wt% solution
我们在这里报告了用于有机薄膜晶体管(OTFT)的新型基于二乙炔基苯的液晶半导体(P1)的合成和表征。通过2-溴-5-(4-己基噻吩-2-基)噻吩并[3,2-b]噻吩与1,4-双(十二烷氧基)-2,5-二乙炔基苯之间的Sonogashira偶联反应合成化合物P1。通过用2 wt%的氯仿中的P1溶液旋转浇铸来制造顶部接触型OTFT,在液晶温度下对薄膜进行退火后,其最佳性能表现出4.5 x 10(-5)cm2 / Vs的空穴迁移率。 。对于正和负载流子,在液晶相上测量的飞行时间(TOF)迁移率均为1.5 x 10(-6)cm2 / Vs。这些结果表明液晶性有助于改善分子堆积并增强P1的电荷迁移率。