2-morpholinoethyl Methoxyacetate | 443796-19-8

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 恶嗪烷类
• 英文名称: 2-morpholinoethyl Methoxyacetate
• 英文别名: 2-morpholinoethyl 2-methoxyacetate；2-Morpholin-4-ylethyl 2-methoxyacetate
• CAS: 443796-19-8
• 化学式: C₉H₁₇NO₄
• 分子量: 203.238
• InChiKey: ZMWQWPMCAKGOMK-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.3
• 重原子数：
  14
• 可旋转键数：
  6
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.89
• 拓扑面积：
  48
• 氢给体数：
  0
• 氢受体数：
  5

文献信息

• [EN] NEW 6-AMINO-QUINOLINONE COMPOUNDS AND DERIVATIVES AS BCL6 INHIBITORS<br/>[FR] NOUVEAUX COMPOSÉS 6-AMINO-QUINOLINONE ET DÉRIVÉS EN TANT QU'INHIBITEURS DE BCL6
  申请人：BOEHRINGER INGELHEIM INT

  公开号：WO2018108704A1

  公开（公告）日：2018-06-21

  The present invention encompasses compounds of formula (I), wherein the groups R1 to R5, X, Y and W have the meanings given in the claims and specification, their use as inhibitors of BCL6, pharmaceutical compositions which contain compounds of this kind and their use as medicaments, especially as agents for treatment and/or prevention of oncological diseases.

  本发明涵盖了式(I)的化合物，其中基团R1至R5、X、Y和W具有权利要求和说明中给定的含义，它们作为BCL6的抑制剂的用途，含有这种化合物的药物组合物以及它们作为药物的用途，特别是作为治疗和/或预防肿瘤疾病的药剂。
• Resist composition and patterning process
  申请人：Watanabe Satoshi

  公开号：US20100009299A1

  公开（公告）日：2010-01-14

  The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F 2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

  本发明涉及一种抗蚀组合物，例如用于在抗蚀物的基板侧边界面上提供优异图案轮廓的化学增感抗蚀组合物，除了在微细加工的光刻工艺中具有更高的分辨率外，特别是在采用KrF激光、ArF激光、F2激光、超短紫外光、电子束、X射线等作为曝光光源的光刻工艺中；以及利用该抗蚀组合物的图案化工艺。本发明提供一种化学增感抗蚀组合物，其包括一种或多种胺化合物或胺氧化合物（除了那些在芳香环的环结构中不含有胺或胺氧原子的氮原子的化合物），至少具有一个羧基，并且没有氢原子共价键结合到氮原子作为碱性中心。
• POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：NISHI Tsunehiro

  公开号：US20100062374A1

  公开（公告）日：2010-03-11

  A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R 1 is H, methyl or trifluoromethyl, X is a single bond or methylene, m is 1 or 2, and the hydroxyl group attaches to a secondary carbon atom. The composition is improved in resolution when processed by lithography.

  一种正性光刻胶组合物包括（A）在酸的作用下在碱性显影剂中变得可溶的树脂组分和（B）酸发生剂。树脂（A）是一种聚合物，包含由式（1）表示的非离去羟基的重复单元，其中R1为H、甲基或三氟甲基，X为单键或亚甲基，m为1或2，并且羟基连接到次级碳原子。当通过光刻工艺处理时，该组合物在分辨率方面得到改善。
• NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Ohsawa Youichi

  公开号：US20090246694A1

  公开（公告）日：2009-10-01

  Photoacid generators generate sulfonic acids of formula ( 1 a) upon exposure to high-energy radiation. ROC(═O)R 1 —COOCH 2 CF 2 SO 3 − H + (1a) RO is OH or C 1 -C 20 organoxy, R 1 is a divalent C 1 -C 20 aliphatic group or forms a cyclic structure with RO. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.

  光酸发生剂在高能辐射作用下生成式（1a）的磺酸。 ROC(═O)R1—COOCH2CF2SO3−H+(1a) RO为OH或C1-C20有机氧基，R1为二价的C1-C20脂肪族基团或与RO形成环状结构。这些光酸发生剂与树脂相容，可以控制酸的扩散，因此适用于化学增感抗蚀组合物的使用。
• POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：OHASHI Masaki

  公开号：US20100099042A1

  公开（公告）日：2010-04-22

  A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R 1 is H, F, methyl or trifluoromethyl, R 2 , R 3 and R 4 are C 1 -C 10 alkyl, alkenyl or oxoalkyl or C 6 -C 18 aryl, aralkyl or aryloxoalkyl, or two of R 2 , R 3 and R 4 may bond together to form a ring with S, A is a C 2 -C 20 hydrocarbon group having cyclic structure, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.

  提供具有式（1）的可聚合含阴离子的亚砜盐，其中R1为H、F、甲基或三氟甲基，R2、R3和R4为C1-C10烷基、烯基或氧代烷基或C6-C18芳基、芳基烷基或芳基氧代烷基，或R2、R3和R4中的两个可以结合在一起形成与S的环，A为具有环状结构的C2-C20烃基团，n为0或1。该亚砜盐在暴露于高能辐射时生成非常强的磺酸。还提供了一种包含从该亚砜盐衍生的聚合物的抗蚀组合物。