Previously unknown N,N-bis[ethoxy(methyl)silylmethyl]amines MeN[CH2SiMem(OEt)(3-m)]2 (m = 0-2) were synthesized. According to UV spectral data, only MeN[CH2SiMe2(OEt)](2) form hydrogen bond with phenol in a heptane solution. The amines with m = 0 and 1 fail to forms hydrogen bond with phenol [under the same conditions, N-(triethoxysilylmethyl)dimethylamine Me2NCH2Si(OEt)(3) forms a strong hydrogen bond with phenol]. All the amines (m = 0-2) enter transetherification with phenol to give compounds of the general formula MeN[CH2SiMem(OPh)(n)(OEt)(3-m-n)](2) (m = 0-2, n = 1-3). Refluxing of N,N-bis[ethoxy(methyl) silylmethyl]amines with excess phenol results in cleavage of the Si-C bond by phenol, providing phenoxy-silanes MemSi(OPh)(4-m) (m = 0-2) and trimethylamine.
Previously unknown N,N-bis[ethoxy(methyl)silylmethyl]amines MeN[CH2SiMem(OEt)(3-m)]2 (m = 0-2) were synthesized. According to UV spectral data, only MeN[CH2SiMe2(OEt)](2) form hydrogen bond with phenol in a heptane solution. The amines with m = 0 and 1 fail to forms hydrogen bond with phenol [under the same conditions, N-(triethoxysilylmethyl)dimethylamine Me2NCH2Si(OEt)(3) forms a strong hydrogen bond with phenol]. All the amines (m = 0-2) enter transetherification with phenol to give compounds of the general formula MeN[CH2SiMem(OPh)(n)(OEt)(3-m-n)](2) (m = 0-2, n = 1-3). Refluxing of N,N-bis[ethoxy(methyl) silylmethyl]amines with excess phenol results in cleavage of the Si-C bond by phenol, providing phenoxy-silanes MemSi(OPh)(4-m) (m = 0-2) and trimethylamine.