Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same
申请人:Nakata Yoshihiro
公开号:US20070026689A1
公开(公告)日:2007-02-01
The silica film forming material of the present invention comprises a silicone polymer which comprises, as part of its structure, CHx, an Si—O—Si bond, an Si—CH
3
bond and an Si—CHx- bond, where x represents an integer of 0 to 2.