1-adamantylmethyloxymethyl methacrylate | 863198-38-3

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: 1-adamantylmethyloxymethyl methacrylate
• 英文别名: 1-Adamantylmethoxymethyl 2-methylprop-2-enoate
• CAS: 863198-38-3
• 化学式: C₁₆H₂₄O₃
• 分子量: 264.365
• InChiKey: VTJWMOCMZOCMRB-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.9
• 重原子数：
  19
• 可旋转键数：
  6
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.81
• 拓扑面积：
  35.5
• 氢给体数：
  0
• 氢受体数：
  3

文献信息

• Polymer Compound, Photoresist Composition Including the Polymer Compound, and Resist Pattern Formation Method
  申请人：Ogata Toshiyuki

  公开号：US20080166655A1

  公开（公告）日：2008-07-10

  The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH 2 —OCH 2  n R 1 (1) (wherein R 1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5.).

  本发明提供了一种聚合物化合物，该化合物可以构成一种光刻胶组合物，该组合物能够具有优异的分辨率，形成具有良好矩形度的精细图案，即使从酸发生器生成的酸的强度较弱，也能获得良好的抗性特性，并具有良好的灵敏度；包括该聚合物化合物的光刻胶组合物；以及使用该光刻胶组合物的抗性图案形成方法。该光刻胶组合物和抗性图案形成方法使用包括碱溶性基团（i）的聚合物化合物，其中碱溶性基团（i）是从醇羟基、羧基或酚羟基中至少选择一个取代基团，并且该取代基团由一种酸解离、抑制溶解的基团（ii）保护，该基团由通式（1）表示：—CH2—O nR1（1）（其中R1表示不含有超过20个碳原子的环烷基团，可能含有氧原子、氮原子、硫原子或卤素原子，n表示0或1到5的整数）。
• POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD FOR FORMING RESIST PATTERN
  申请人：TOKYO OHKA KOGYO CO., LTD.

  公开号：EP1717261A1

  公开（公告）日：2006-11-02

  The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): (wherein R1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5.).

  本发明提供了一种聚合物化合物，它可以构成一种光刻胶组合物，该组合物能够具有极佳的分辨率，形成具有良好矩形度的精细图案，即使在酸发生器产生的酸的酸强度较弱时也能获得良好的抗蚀特性，并且具有良好的灵敏度；一种包括该聚合物化合物的光刻胶组合物；以及一种使用该光刻胶组合物的抗蚀图案形成方法。光刻胶组合物和抗蚀剂图案形成方法使用包括碱溶性基团(i)的聚合物化合物，其中碱溶性基团(i)是至少一个选自醇羟基、羧基或酚羟基的取代基，取代基被通式(1)表示的可酸解、溶解抑制基团(ii)保护： (其中 R1 代表含不超过 20 个碳原子的环脂族基团，可包含氧原子、氮原子、硫原子或卤素原子，n 代表 0 或 1 至 5 的整数）。
• Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern
  申请人：Tokyo Ohka Kogyo Co., Ltd.

  公开号：EP2433972A1

  公开（公告）日：2012-03-28

  The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): (wherein R1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5.).

  本发明提供了一种聚合物化合物，它可以构成一种光刻胶组合物，该组合物能够具有极佳的分辨率，形成具有良好矩形度的精细图案，即使在酸发生器产生的酸的酸强度较弱时也能获得良好的抗蚀特性，并且具有良好的灵敏度；一种包括该聚合物化合物的光刻胶组合物；以及一种使用该光刻胶组合物的抗蚀图案形成方法。光刻胶组合物和抗蚀剂图案形成方法使用包括碱溶性基团(i)的聚合物化合物，其中碱溶性基团(i)是至少一个选自醇羟基、羧基或酚羟基的取代基，取代基被通式(1)表示的可酸解、溶解抑制基团(ii)保护： (其中 R1 代表含不超过 20 个碳原子的环脂族基团，可包含氧原子、氮原子、硫原子或卤素原子，n 代表 0 或 1 至 5 的整数）。
• Polymers, resist compositions and patterning process
  申请人：Funatsu Kenji

  公开号：US20070148594A1

  公开（公告）日：2007-06-28

  A polymer is provided comprising recurring units having formulas (1), (2), (3), (4), (5), and (6) in amounts of 1-60 mol % (1), 1-60 mol % (2), 1-50 mol % (3), 0-60 mol % (4), 0-30 mol % (5), and 0-30 mol % (6), and having a Mw of 3,000-30,000 and a Mw/Mn of 1.5-2.5. R 1 , R 3 , R 4 , R 7 , R 9 , and R 11 are H or CH 3 , Y is methylene or O, R 2 is CO 2 R 10 when Y is methylene and R 2 is H or CO 2 R 10 when Y is O, R 10 is C 1 -C 15 alkyl which may be separated by O, R 5 and R 6 are H or OH, R 8 is a tertiary ester type acid-labile protective group, and R 12 is OH-containing fluoroalkyl. A resist composition comprising the polymer has a high resolution and is improved in line edge roughness and I/G bias.
• METHOD OF FORMING POLYMERIC COMPOUND, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
  申请人：Tokyo Ohka Kogyo Co., Ltd.

  公开号：US20130137049A1

  公开（公告）日：2013-05-30

  A method of producing a polymeric compound, including: copolymerizing a monomer containing an —SO 2 — containing cyclic group with a monomer containing an acid decomposable group which exhibits increased polarity by the action of acid, thereby obtaining the polymeric compound, provided that the polymeric compound comprises no structural unit derived from a monomer that generates acid upon exposure, wherein the copolymerizing is conducted in the presence of 0.001 to 1.0 mol % of a basic compound, based on the monomer containing an —SO 2 — containing cyclic group.