In a pattern formation method, a resist film made of a chemically amplified resist material including a first polymer having hemiacetal or hemiketal is formed on a substrate. Then, with a liquid provided on the resist film, pattern exposure is performed by selectively irradiating the resist film with exposing light. After the pattern exposure, the resist film is developed so as to form a resist pattern made of the resist film.
在一种图案形成方法中,在基板上形成由
化学放大抗蚀剂材料(包括具有
半缩醛或半
缩酮的第一聚合物)制成的抗蚀剂薄膜。然后,在抗蚀剂薄膜上提供液体,通过选择性地用曝光光照射抗蚀剂薄膜来进行图案曝光。图案曝光后,对抗蚀剂薄膜进行显影,以形成由抗蚀剂薄膜制成的抗蚀剂图案。