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1-(2-naphthyl)-1,1-bis(3-methyl-4-hydroxyphenyl)ethane | 848873-32-5

中文名称
——
中文别名
——
英文名称
1-(2-naphthyl)-1,1-bis(3-methyl-4-hydroxyphenyl)ethane
英文别名
4-[1-(4-hydroxy-3-methylphenyl)-1-naphthalen-2-ylethyl]-2-methylphenol
1-(2-naphthyl)-1,1-bis(3-methyl-4-hydroxyphenyl)ethane化学式
CAS
848873-32-5
化学式
C26H24O2
mdl
——
分子量
368.475
InChiKey
RVKJLVOKFRZVIZ-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    7.1
  • 重原子数:
    28
  • 可旋转键数:
    3
  • 环数:
    4.0
  • sp3杂化的碳原子比例:
    0.15
  • 拓扑面积:
    40.5
  • 氢给体数:
    2
  • 氢受体数:
    2

反应信息

  • 作为产物:
    描述:
    邻甲酚2-萘乙酮硫酸3-巯基丙酸 、 silica gel 作用下, 以 甲苯 为溶剂, 以to obtain 24 g of the titled compound的产率得到1-(2-naphthyl)-1,1-bis(3-methyl-4-hydroxyphenyl)ethane
    参考文献:
    名称:
    Method of manufacturing a semiconductor device
    摘要:
    本发明的化合物由以下的公式1表示:其中,R1、R2、R4、R5、m0至m2和n0至n2的定义如描述中所述。含有公式1化合物作为固体组分主要成分的辐射敏感组合物在敏感性、分辨率、耐热性、耐蚀性和溶解度方面表现出色。
    公开号:
    US20070059632A1
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文献信息

  • Compound for Resist and Radiation-Sensitive Composition
    申请人:Echigo Masatoshi
    公开号:US20080113294A1
    公开(公告)日:2008-05-15
    A radiation-sensitive composition containing 1 to 80% by weight of a solid component and 20 to 99% by weight of a solvent. The solid component contains a compound B which has (a) a structure derived from a polyphenol compound A by introducing an acid-dissociating group to at least one phenolic hydroxyl group of the polyphenol compound A which is synthesized by a condensation between a di- to tetrafunctional aromatic ketone or aromatic aldehyde each having 5 to 36 carbon atoms with a compound having 1 to 3 phenolic hydroxyl groups and 6 to 15 carbon atoms, and (b) a molecular weight of 400 to 2000. The composition containing the compound B is useful as an acid-amplified, non-polymeric resist material, because it is highly sensitive to radiation such as KrF excimer lasers, extreme ultraviolet rays, electron beams, and X-rays, and provides resist patterns with a high resolution, high heat resistance, and high etching resistance.
    一种辐射敏感的组合物,包含1至80重量%的固体组分和20至99重量%的溶剂。固体组分包含化合物B,其具有(a)通过向多化合物A的至少一个羟基引入酸解离基而导出的结构,多化合物A通过二元至四元芳香酮或芳香醛的缩合反应,每个具有5至36个碳原子的化合物与具有1至3个羟基和6至15个碳原子的化合物结合,并且(b)分子量为400至2000。含有化合物B的组合物非常敏感于辐射,例如KrF准分子激光器,极紫外线,电子束和X射线,并且提供具有高分辨率,高耐热性和高蚀刻抗性的抗阻图案,因此可用作酸放大的非聚合物抗阻材料。
  • COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION
    申请人:ECHIGO Masatoshi
    公开号:US20110165516A1
    公开(公告)日:2011-07-07
    A radiation-sensitive composition containing 1 to 80% by weight of a solid component and 20 to 99% by weight of a solvent. The solid component contains a compound B which has (a) a structure derived from a polyphenol compound A by introducing an acid-dissociating group to at least one phenolic hydroxyl group of the polyphenol compound A which is synthesized by a condensation between a di- to tetrafunctional aromatic ketone or aromatic aldehyde each having 5 to 36 carbon atoms with a compound having 1 to 3 phenolic hydroxyl groups and 6 to 15 carbon atoms, and (b) a molecular weight of 400 to 2000. The composition containing the compound B is useful as an acid-amplified, non-polymeric resist material, because it is highly sensitive to radiation such as KrF excimer lasers, extreme ultraviolet rays, electron beams, and X-rays, and provides resist patterns with a high resolution, high heat resistance, and high etching resistance.
    一种辐射敏感组合物,含有1-80重量%的固体组分和20-99重量%的溶剂。固体组分包含化合物B,其具有(a)从多化合物A导出的结构,通过在多化合物A的至少一个羟基上引入酸解离基团而合成,多化合物A是由具有5至36个碳原子的二元至四元芳香酮或芳香醛与具有1至3个羟基和6至15个碳原子的化合物之间的缩合反应合成的;(b)分子量为400至2000。含有化合物B的组合物可用作酸放大,非聚合物抗蚀材料,因为它对KrF准分子激光、极紫外线、电子束和X射线等辐射非常敏感,并提供具有高分辨率、高耐热性和高蚀刻抗性的抗蚀图案。
  • Compound for resist and radiation-sensitive composition
    申请人:Mitsubishi Gas Chemical Company, Inc.
    公开号:US07919223B2
    公开(公告)日:2011-04-05
    A radiation-sensitive composition containing 1 to 80% by weight of a solid component and 20 to 99% by weight of a solvent. The solid component contains a compound B which has (a) a structure derived from a polyphenol compound A by introducing an acid-dissociating group to at least one phenolic hydroxyl group of the polyphenol compound A which is synthesized by a condensation between a di- to tetrafunctional aromatic ketone or aromatic aldehyde each having 5 to 36 carbon atoms with a compound having 1 to 3 phenolic hydroxyl groups and 6 to 15 carbon atoms, and (b) a molecular weight of 400 to 2000. The composition containing the compound B is useful as an acid-amplified, non-polymeric resist material, because it is highly sensitive to radiation such as KrF excimer lasers, extreme ultraviolet rays, electron beams, and X-rays, and provides resist patterns with a high resolution, high heat resistance, and high etching resistance.
    一种辐射敏感组合物,其含有1至80重量%的固体成分和20至99重量%的溶剂。固体成分包含化合物B,其具有(a)通过在多化合物A的至少一个羟基上引入酸解离基而得到的结构,多化合物A是通过二至四官能芳香酮或芳香醛与具有1至3个羟基和6至15个碳原子的化合物之间的缩合反应合成的,以及(b)分子量为400至2000。含有化合物B的组合物可用作酸增强的非聚合物抗蚀材料,因为它对KrF准分子激光、极紫外线、电子束和X射线等辐射具有高敏感性,并提供具有高分辨率、高耐热性和高蚀刻抗性的抗蚀图案。
  • Resist composition
    申请人:Echigo Masatoshi
    公开号:US20080153031A1
    公开(公告)日:2008-06-26
    A radiation-sensitive composition containing a resist compound A, an acid generator B, and an acid crosslinking agent C. The resist compound A is (a) a polyphenol compound which is produced by the condensation of a C 5-45 aromatic ketone or aromatic aldehyde with a C 6-15 compound having from 1 to 3 phenolic hydroxyl groups, and, (b) its molecular weight is form 300 to 5000. The radiation-sensitive composition is solvent-soluble and exhibits a high sensitivity, high resolution, and high heat resistance.
  • COMPOSITION FOR FORMING BASE FILM FOR LITHOGRAPHY AND METHOD FOR FORMING MULTILAYER RESIST PATTERN
    申请人:Oguro Dai
    公开号:US20100316950A1
    公开(公告)日:2010-12-16
    A composition for forming an underlayer film for lithography for imparting excellent optical characteristics and etching resistance to an underlayer film for lithography, an underlayer film being formed of the composition and having a high refractive index (n) and a low extinction coefficient (k), being transparent, having high etching resistance, containing a significantly small amount of a sublimable component, and a method for forming a pattern using the underlayer film are provided. The composition for forming an underlayer film contains a naphthalene formaldehyde polymer having a specific unit obtained by reacting naphthalene and/or alkylnaphthalene with formaldehyde, and an organic solvent.
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