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4-(N,N-bis{4-[N,N-phenyl(m-tolyl)amino]phenyl}amino)-1-vinylbenzene | 1239683-75-0

中文名称
——
中文别名
——
英文名称
4-(N,N-bis{4-[N,N-phenyl(m-tolyl)amino]phenyl}amino)-1-vinylbenzene
英文别名
1-N-(4-ethenylphenyl)-4-N-(3-methylphenyl)-1-N-[4-(N-(3-methylphenyl)anilino)phenyl]-4-N-phenylbenzene-1,4-diamine
4-(N,N-bis{4-[N,N-phenyl(m-tolyl)amino]phenyl}amino)-1-vinylbenzene化学式
CAS
1239683-75-0
化学式
C46H39N3
mdl
——
分子量
633.836
InChiKey
WHGZEOQCCDYSDP-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    13.1
  • 重原子数:
    49
  • 可旋转键数:
    10
  • 环数:
    7.0
  • sp3杂化的碳原子比例:
    0.04
  • 拓扑面积:
    9.7
  • 氢给体数:
    0
  • 氢受体数:
    3

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为产物:
    参考文献:
    名称:
    空穴传输主体聚合物系列,由三苯胺基本结构组成,用于磷光聚合物发光二极管
    摘要:
    合成了一系列具有三苯胺基单元的新型苯乙烯衍生单体及其聚合物,并将其与众所周知的N,N'-双(3-甲基苯基)-N,N的聚合物结构进行了比较'-二苯基联苯胺在磷光聚合物发光二极管(PLED)中的空穴传输行为方面。选择乙烯基三苯胺结构作为基本单元,在对位具有以下侧基的官能团:二苯胺,3-甲基苯基-苯胺,1-和2-萘胺,咔唑和吩噻嗪。该聚合物在PLED中用作以下系统配置的共混体系的主体聚合物:玻璃/铟锡氧化物/ PEDOT:PSS /聚合物共混物/ CsF / Ca / Ag。除空穴传输主体聚合物外,聚合物共混物还包括磷光掺杂剂[Ir(Me-ppy)3 ]和电子传输分子(2-(4-联苯)-5-(4-叔丁基)-丁基苯基)-1,3,4-恶二唑)。我们证明,对于这些共混体系而言,两种聚合物是出色的空穴传输基质材料,因为它们具有良好的整体电致发光性能和较高的玻璃化转变温度。对于咔唑取代的聚合物(T g =
    DOI:
    10.1002/pola.24127
点击查看最新优质反应信息

文献信息

  • CHARGE TRANSPORTING SEMI-CONDUCTING MATERIAL AND ELECTRONIC DEVICE COMPRISING IT
    申请人:Novaled GmbH
    公开号:EP3208863A1
    公开(公告)日:2017-08-23
    The present invention is related to a charge transporting semi-conducting material comprising: a) at least one electrical dopant, and b) a branched or cross-linked charge-transporting polymer comprising cyclobutenone cross-linking units of at least one of the general formulae Ia and/or Ib, wherein aa) Pol1, Pol2, Pol3 and Pol4 are independently selected chains of the charge-transporting polymer, bb) X1, X2, X3, and X4 are independently selected optional spacer units or, independently, represent direct bonding of Pol1, Pol2, Pol3 and Pol4 chains to the cyclobutenone ring, cc) Z1, Z2, Z3, and Z4 are independently selected from H, halogen or a carbon-containing group; the charge transporting semi-conducting material being obtainable by a process comprising: i) providing a solution containing aaa) at least one precursor charge transporting compound comprising at least one covaleiztly attached alkinyloxy group having generic formula II wherein X is an optional spacer which is further linked to a charge transporting structural moiety of the precursor charge transporting compound, the dashed line represents the bonding to a charge transporting structural moiety of the precursor charge transporting compound and Z1, Z2, Z3, and Z4 are independently selected from H, halogen or the carbon-containing group, bbb) at least one electrical dopant, ccc) at least one solvent, ii) depositing the solution on a substrate, iii) removing the solvent, and iv) reacting the alkinyloxy groups to effect crosslinking, preferably by heating, wherein the average number of the alkinyloxy groups per one molecule of the precursor charge transporting compound provided in the step i) is equal to or greater than 2, preferably greater than 2.05, a polymer and precursors as defined above, a process for preparing the charge transporting semi-conducting material and an electronic device comprising the same.
    本发明涉及一种电荷传输半导电材料,该材料包括 a) 至少一种电掺杂剂,以及 b) 由至少一种通式 Ia 和/或 Ib 的环丁烯酮交联单元组成的支化或交联电荷传输聚合物、 其中 aa) Pol1、Pol2、Pol3 和 Pol4 是独立选定的电荷传输聚合物链、 bb)X1、X2、X3 和 X4 是独立选择的任选间隔单元,或独立代表 Pol1、Pol2、Pol3 和 Pol4 链与环丁烯酮环的直接键合、 cc) Z1、Z2、Z3 和 Z4 分别独立地选自 H、卤素或含碳基团; 电荷传输半导电材料可通过以下工艺获得,包括 i) 提供含有以下成分的溶液 aaa) 至少一种前体电荷传输化合物,包含至少一个共价连接的烷氧基,其通式为 II 其中 X 是任选的间隔物,它进一步与前体电荷传输化合物的电荷传输结构分子相连、 虚线表示与前体电荷传输化合物的电荷传输结构分子键合,以及 Z1、Z2、Z3 和 Z4 分别独立地选自 H、卤素或含碳基团、 bbb) 至少一种电掺杂剂、 ccc) 至少一种溶剂、 ii) 将溶液沉积在基底上、 去除溶剂,以及 iv) 使烷氧基发生反应以实现交联,最好是通过加热、 其中,在步骤 i) 中提供的每一分子前体电荷传输化合物中的烷氧基的平均数量等于或大于 2,最好大于 2.05,如上定义的聚合物和前体,制备电荷传输半导电材料的工艺和包含该材料的电子装置。
  • Charge transporting semi-conducting material and electronic device comprising it
    申请人:Novaled GmbH
    公开号:US10873030B2
    公开(公告)日:2020-12-22
    The present invention relates to a charge transporting semi-conducting material comprising: a) at least one electrical dopant, and b) a branched or cross-linked charge-transporting polymer comprising cyclobutenone cross-linking units of at least one of the general formulae la and/or lb, wherein aa) Pol1, Pol2, Pol3 and Pol4 are independently selected chains of the charge-transporting polymer, bb) X1, X2, X3, and X4 are independently selected optional spacer units or, independently, represent direct bonding of Pol1, Pol2, Pol3 and Pol4 chains to the cyclobutenone ring, cc) Z1, Z2, Z3, and Z4 are independently selected from H, halogen or a carbon-containing group; the charge transporting semi-conducting material being obtainable by a process comprising: i) providing a solution containing aaa) at least one precursor charge transporting compound comprising at least one covalently attacked alkenyloxy group having generic formula II wherein X is an optional spacer which is further linked to a charge transporting structural moiety of the precursor charge transporting compound, the dashed line represents the bonding to a charge transporting structural moiety of the precursor charge transporting compound and Z1, Z2, Z3, and Z4 are independently selected from H, halogen or the carbon-containing group, bbb) at least one electrical dopant, ccc) at least one solvent, ii) depositing the solution on a substrate, iii) removing the solvent, and iv) reacting the alkinyloxy groups to effect crosslinking, preferably by heating, wherein the average number of the alkinyloxy groups per one molecule of the precursor charge transporting compound provided in the step i) is equal to or greater than 2, preferably greater than 2.05, and a process for preparing the same.
    本发明涉及一种电荷传输半导电材料,该材料包括: a) 至少一种电掺杂剂,和 b) 支化或交联的电荷传输聚合物,该聚合物包含通式 la 和/或 lb 中至少一种的环丁烯酮交联单元,其中 aa) Pol1、Pol2、Pol3 和 Pol4 是独立选择的电荷传输聚合物链,bb)X1、X2、X3 和 X4 是独立选择的任选间隔单元,或独立代表 Pol1、Pol2、Pol3 和 Pol4 链与环丁烯酮环的直接键合,cc) Z1、Z2、Z3 和 Z4 是独立选择的 H、卤素或含碳基团;电荷传输半导电材料可通过以下工艺获得:i) 提供含有 aaa) 至少一种前体电荷传输化合物的溶液,该前体电荷传输化合物包含至少一个具有通式 II 的共价键合烯氧基,其中 X 是任选的间隔物,该间隔物与前体电荷传输化合物的电荷传输结构分子进一步连接,虚线表示与前体电荷传输化合物的电荷传输结构分子的键合,Z1、Z2、Z3、bbb)至少一种电掺杂剂,ccc)至少一种溶剂,ii)将溶液沉积在基底上,iii)除去溶剂,和iv)使烷氧基反应以实现交联,优选通过加热,其中步骤i)中提供的每一分子前体电荷传输化合物中烷氧基的平均数目等于或大于2,优选大于2。05,以及制备相同物质的工艺。
  • Charge Transporting Semi-Conducting Material and Electronic Device Comprising It
    申请人:Novaled GmbH
    公开号:US20190058128A1
    公开(公告)日:2019-02-21
    The present invention relates to a charge transporting semi-conducting material comprising: a) at least one electrical dopant, and b) a branched or cross-linked charge-transporting polymer comprising cyclobutenone cross-linking units of at least one of the general formulae la and/or lb, wherein aa) Pol 1 , Pol 2 , Pol 3 and Pol 4 are independently selected chains of the charge-transporting polymer, bb) X 1 , X 2 , X 3 , and X 4 are independently selected optional spacer units or, independently, represent direct bonding of Pol 1 , Pol 2 , Pol 3 and Pol 4 chains to the cyclobutenone ring, cc) Z 1 , Z 2 , Z 3 , and Z 4 are independently selected from H, halogen or a carbon-containing group; the charge transporting semi-conducting material being obtainable by a process comprising: i) providing a solution containing aaa) at least one precursor charge transporting compound comprising at least one covalently attacked alkenyloxy group having generic formula II wherein X is an optional spacer which is further linked to a charge transporting structural moiety of the precursor charge transporting compound, the dashed line represents the bonding to a charge transporting structural moiety of the precursor charge transporting compound and Z 1 , Z 2 , Z 3 , and Z 4 are independently selected from H, halogen or the carbon-containing group, bbb) at least one electrical dopant, ccc) at least one solvent, ii) depositing the solution on a substrate, iii) removing the solvent, and iv) reacting the alkinyloxy groups to effect crosslinking, preferably by heating, wherein the average number of the alkinyloxy groups per one molecule of the precursor charge transporting compound provided in the step i) is equal to or greater than 2, preferably greater than 2.05, and a process for preparing the same.
  • [EN] CHARGE TRANSPORTING SEMI-CONDUCTING MATERIAL AND ELECTRONIC DEVICE COMPRISING IT<br/>[FR] MATÉRIAU SEMI-CONDUCTEUR À TRANSFERT DE CHARGE ET DISPOSITIF ÉLECTRONIQUE LE COMPRENANT
    申请人:NOVALED GMBH
    公开号:WO2017144516A1
    公开(公告)日:2017-08-31
    The present invention relates to a charge transporting semi-conducting material comprising: a) at least one electrical dopant, and b) a branched or cross-linked charge-transporting polymer comprising cyclobutenone cross-linking units of at least one of the general formulae la and/or lb, wherein aa) Pol1, Pol2, Pol3 and Pol4 are independently selected chains of the charge-transporting polymer, bb) X1, X2, X3, and X4 are independently selected optional spacer units or, independently, represent direct bonding of Pol1, Pol2, Pol3 and Pol4 chains to the cyclobutenone ring, cc) Z1, Z2, Z3, and Z4 are independently selected from H, halogen or a carbon-containing group; the charge transporting semi-conducting material being obtainable by a process comprising: i) providing a solution containing aaa) at least one precursor charge transporting compound comprising at least one covalently attached alkinyloxy group having generic formula II wherein X is an optional spacer which is further linked to a charge transporting structural moiety of the precursor charge transporting compound, the dashed line represents the bonding to a charge transporting structural moiety of the precursor charge transporting compound and Z1, Z2, Z3, and Z4 are independently selected from H, halogen or the carbon-containing group, bbb) at least one electrical dopant, ccc) at least one solvent, ii) depositing the solution on a substrate, iii) removing the solvent, and iv) reacting the alkinyloxy groups to effect crosslinking, preferably by heating, wherein the average number of the alkinyloxy groups per one molecule of the precursor charge transporting compound provided in the step i) is equal to or greater than 2, preferably greater than 2.05, and a process for preparing the same.
  • Hole-transporting host-polymer series consisting of triphenylamine basic structures for phosphorescent polymer light-emitting diodes
    作者:Manuel W. Thesen、Bianca Höfer、Marc Debeaux、Silvia Janietz、Armin Wedel、Anna Köhler、Hans-Hermann Johannes、Hartmut Krueger
    DOI:10.1002/pola.24127
    日期:——
    A series of novel styrene derived monomers with triphenylamine‐based units, and their polymers have been synthesized and compared with the well‐known structure of polymer of N,N′‐bis(3‐methylphenyl)‐N,N′‐diphenylbenzidine with respect to their hole‐transporting behavior in phosphorescent polymer light‐emitting diodes (PLEDs). A vinyltriphenylamine structure was selected as a basic unit, functionalized
    合成了一系列具有三苯胺基单元的新型苯乙烯衍生单体及其聚合物,并将其与众所周知的N,N'-双(3-甲基苯基)-N,N的聚合物结构进行了比较'-二苯基联苯胺在磷光聚合物发光二极管(PLED)中的空穴传输行为方面。选择乙烯基三苯胺结构作为基本单元,在对位具有以下侧基的官能团:二苯胺,3-甲基苯基-苯胺,1-和2-萘胺,咔唑和吩噻嗪。该聚合物在PLED中用作以下系统配置的共混体系的主体聚合物:玻璃/铟锡氧化物/ PEDOT:PSS /聚合物共混物/ CsF / Ca / Ag。除空穴传输主体聚合物外,聚合物共混物还包括磷光掺杂剂[Ir(Me-ppy)3 ]和电子传输分子(2-(4-联苯)-5-(4-叔丁基)-丁基苯基)-1,3,4-恶二唑)。我们证明,对于这些共混体系而言,两种聚合物是出色的空穴传输基质材料,因为它们具有良好的整体电致发光性能和较高的玻璃化转变温度。对于咔唑取代的聚合物(T g =
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