N-[3-[bis(2-hydroxyethyl)amino]propyl]prop-2-enamide | 101421-55-0

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: N-[3-[bis(2-hydroxyethyl)amino]propyl]prop-2-enamide
• CAS: 101421-55-0
• 化学式: C₁₀H₂₀N₂O₃
• 分子量: 216.28
• InChiKey: PBJMWQHIBDHHPU-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.8
• 重原子数：
  15
• 可旋转键数：
  9
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.7
• 拓扑面积：
  72.8
• 氢给体数：
  3
• 氢受体数：
  4

文献信息

• Graft copolymer and process for producing the same
  申请人：IDEMITSU KOSAN COMPANY LIMITED

  公开号：EP0490269A1

  公开（公告）日：1992-06-17

  There is provided a process for producing a styrenic graft copolymer which comprises coplymerizing a styrenic monomer and a styrenic monomer having a hydrocarbon radical with an unsaturated bond in the presence of a catalyst comprising as primary ingredient (A) a transition metal compound and (B) a contact product of an organoaluminum compound and a condensation agent or (C) a compound which produces an ionic complex by reacting with the above-mentioned transition metal compound and subsequently graft polymerizing an ethylenically unsaturated monomer onto the resultant styrenic copolymer. The above-described styrenic graft copolymer is greatly improved in terms of compatibility, adhesivity, coatability and wettability while preserving heat resistance and chemical resistance thereof, and thus effective as a variety of constructional materials and compatibilizing agents. Furthermore, the composition or multi-layer material comprising the above-mentioned styrenic graft copolymer is widely utilized in a variety of application field including film, sheet, especially stampable sheet, container, packaging material, automobile parts, electrical and electronic parts, etc.

  提供了一种生产苯乙烯接枝共聚物的工艺，该工艺包括在催化剂存在下，使苯乙烯单体和具有不饱和键烃基的苯乙烯单体共聚，催化剂的主要成分包括(A)过渡金属化合物和(B)有机铝化合物与缩合剂的接触产物或(C)通过与上述过渡金属化合物反应产生离子络合物的化合物，然后将乙烯基不饱和单体接枝聚合到生成的苯乙烯共聚物上。上述过渡金属化合物反应生成离子络合物的化合物，然后将乙烯不饱和单体接枝聚合到生成的苯乙烯共聚物上。 上述苯乙烯接枝共聚物在保持其耐热性和耐化学性的同时，在相容性、粘合性、涂覆性和润湿性方面得到了极大的改善，因此可以有效地用作各种建筑材料和相容剂。此外，由上述苯乙烯接枝共聚物组成的组合物或多层材料可广泛应用于各种应用领域，包括薄膜、片材，尤其是可冲压片材、容器、包装材料、汽车零件、电子电气零件等。
• POLISHING COMPOSITION, PRODUCTION METHOD FOR POLISHING COMPOSITION, AND PRODUCTION METHOD FOR POLISHED ARTICLE
  申请人：Fujimi Incorporated

  公开号：EP2957613A1

  公开（公告）日：2015-12-23

  The present invention provides a polishing composition comprising an abrasive, a water-soluble polymer and water. The polishing composition has a volume average particle diameter DA of grains in the polishing composition of 20 nm to 60 nm measured by dynamic light scattering at a concentration equivalent to 0.2 % abrasive content by mass.

  本发明提供了一种由磨料、水溶性聚合物和水组成的抛光组合物。通过动态光散射测量，抛光组合物中颗粒的体积平均粒径 DA 为 20 nm 至 60 nm，浓度相当于 0.2 % 的研磨剂含量（质量百分比）。
• POLISHING COMPOSITION AND METHOD FOR MANUFACTURING POLISHED ARTICLE
  申请人：Fujimi Incorporated

  公开号：EP2960314A1

  公开（公告）日：2015-12-30

  This invention provides a polishing composition comprising an abrasive, a water-soluble polymer and water. The water-soluble polymer comprises a polymer A having an adsorption ratio of lower than 5 % and a polymer B having an adsorption ratio of 5 % or higher, but lower than 95 % based on a prescribed adsorption ratio measurement. Herein, the polymer B is selected from polymers excluding hydroxyethyl celluloses.

  本发明提供了一种抛光组合物，它由磨料、水溶性聚合物和水组成。水溶性聚合物包括吸附率低于 5%的聚合物 A 和根据规定的吸附率测量吸附率为 5%或更高但低于 95%的聚合物 B。其中，聚合物 B 选自不包括羟乙基纤维素的聚合物。
• COMPOSITION FOR SILICON WAFER POLISHING
  申请人：Fujimi Incorporated

  公开号：EP3007213A1

  公开（公告）日：2016-04-13

  This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.

  本发明提供了一种在研磨剂存在的情况下使用的硅片抛光组合物。该组合物由硅片抛光促进剂、含酰胺基聚合物和水组成。含酰胺基聚合物的主链中有一个构建单元 A。构建单元 A 包括构成含酰胺基聚合物主链的主链碳原子和二级酰胺基或三级酰胺基。构成仲酰胺基团或叔酰胺基团的羰基碳原子直接与主链碳原子相连。
• METHOD FOR POLISHING SILICON WAFER, POLISHING COMPOSITION, AND POLISHING COMPOSITION SET
  申请人：Fujimi Incorporated

  公开号：EP3159915A1

  公开（公告）日：2017-04-26

  Provided is a method for polishing a silicon wafer that can effectively obtain a high-grade surface. The method for polishing a silicon wafer includes an intermediate polishing step of polishing a silicon wafer with a polishing slurry Sp containing abrasive grains and a final polishing step of polishing the silicon wafer with a polishing slurry Sf containing abrasive grains. The polishing slurry Sp has a relative haze Hp greater than a relative haze Hf of the polishing slurry Sf and less than 6.8 times as high as the relative haze Hf of the polishing slurry Sf.

  本发明提供了一种能有效获得高档表面的硅晶片抛光方法。 抛光硅晶片的方法包括用含有磨粒的抛光浆料 Sp 抛光硅晶片的中间抛光步骤和用含有磨粒的抛光浆料 Sf 抛光硅晶片的最后抛光步骤。 抛光浆料 Sp 的相对雾度 Hp 大于抛光浆料 Sf 的相对雾度 Hf，且小于抛光浆料 Sf 的相对雾度 Hf 的 6.8 倍。