A gas barrier film (10) that comprises a gas barrier layer (14), which is obtained by irradiating a layer that contains a polysilazane with vacuum ultraviolet light, on a base (11) is formed to contain a compound (A) that satisfies all of the conditions (a), (b) and (c) described below in an amount within the range from 1% by mass to 40% by mass (inclusive) relative to the total mass of the gas barrier layer. (a) The compound (A) has an Si-O bond and an organic group that is directly bonded to Si. (b) The compound (A) has an Si-H group or an Si-OH group. (c) The compound (A) has a molecular weight of from 90 to 1,200 (inclusive).
一种气体阻隔薄膜 (10) 由气体阻隔层 (14) 构成,气体阻隔层 (14) 是通过用真空紫外线照射基底 (11) 上含有聚
硅氮烷的层而得到的,形成时含有满足下述所有条件 (a)、(b) 和 (c) 的化合物 (A),其含量相对于气体阻隔层的总质量在 1%(按质量计)至 40%(按质量计)的范围内。(a) 化合物 (A) 具有一个 Si-O 键和一个直接与 Si 结合的有机基团。(b) 化合物(A)具有一个 Si-H 基团或一个 Si-OH 基团。(c) 化合物(A)的分子量为 90 至 1 200(含)。