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2-Mercaptocyclohexane-1-carboxylic acid | 1074-00-6

中文名称
——
中文别名
——
英文名称
2-Mercaptocyclohexane-1-carboxylic acid
英文别名
2-sulfanylcyclohexane-1-carboxylic acid
2-Mercaptocyclohexane-1-carboxylic acid化学式
CAS
1074-00-6
化学式
C7H12O2S
mdl
——
分子量
160.24
InChiKey
BJHARLJQBXHVKE-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    1.5
  • 重原子数:
    10
  • 可旋转键数:
    1
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.86
  • 拓扑面积:
    38.3
  • 氢给体数:
    2
  • 氢受体数:
    3

文献信息

  • CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, METHOD OF MANUFACTURING PHOTOSENSITIVE DRY FILM, METHOD OF MANUFACTURING PATTERNED RESIST FILM, METHOD OF MANUFACTURING SUBSTRATE WITH TEMPLATE, METHOD OF MANUFACTURING PLATED ARTICLE, AND MERCAPTO COMPOUND
    申请人:TOKYO OHKA KOGYO CO., LTD.
    公开号:US20190121233A1
    公开(公告)日:2019-04-25
    A chemically amplified positive-type photosensitive resin composition capable of suppressing the occurrence of “footing” in which the width of the bottom (the side proximal to the surface of a support) becomes narrower than that of the top (the side proximal to the surface of a resist layer) in the nonresist portion; and the generation of development residue when a resist pattern serving as a template for a plated article is formed on a metal surface of a substrate using the photosensitive resin composition. A mercapto compound having a specific structure is included in the photosensitive resin composition, and includes an acid generator which generates acid upon exposure to an irradiated active ray or radiation, and a resin whose solubility in alkali increases under the action of acid.
    一种化学增感型正型光敏树脂组合物,能够抑制“足部”现象的发生,即底部(靠近支撑表面的一侧)的宽度变窄,小于顶部(靠近抗蚀层表面的一侧)的宽度,同时在使用该光敏树脂组合物在基板的属表面上形成用作电镀物品模板的抗蚀图案时,能够减少残留物的产生。该光敏树脂组合物中包含一种具有特定结构的巯基化合物,其中包括一个酸发生剂,该酸发生剂在暴露于辐射活性光线或辐射时产生酸,以及一种树脂,在酸的作用下其在碱性溶液中的溶解度增加。
  • Improved PVC foam compositions
    申请人:MORTON INTERNATIONAL, INC.
    公开号:EP0866090A1
    公开(公告)日:1998-09-23
    The density of rigid foamed articles made by the thermal decomposition of a blowing agent in a vinyl chloride polymer is reduced by the use of an organotin halide in combination with a mercaptocarboxylic acid ester or a sulfide of such ester or a mixture of the ester and the sulfide to activate the blowing agent.
    通过使用有机锡卤化物与羧酸酯或羧酸酯的硫化物羧酸酯与硫化物的混合物来活化发泡剂,可降低通过发泡剂在氯乙烯聚合物中的热分解而制成的硬质发泡物品的密度。
  • SOLUTION AND METHOD FOR REMOVAL OF GROUP III-V ELEMENT OXIDE, SOLUTION FOR TREATMENT OF GROUP III-V ELEMENT COMPOUND, SOLUTION FOR PREVENTING OXIDATION OF GROUP III-V ELEMENT, SOLUTION FOR TREATMENT OF SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCTION OF SEMICONDUCTOR SUBSTRATE PRODUCT
    申请人:Fujifilm Corporation
    公开号:EP3258485A1
    公开(公告)日:2017-12-20
    Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a Group III-V element or a treatment liquid for treating an oxide of a Group III-V element, each liquid including an acid and a mercapto compound; and a method using each of the same liquids. Further provided are a treatment liquid for treating a semiconductor substrate, including an acid and a mercapto compound, and a method for producing a semiconductor substrate product using the same.
    本发明提供了一种用于去除 III-V 族元素氧化物的去除液、一种用于防止 III-V 族元素氧化物氧化的防氧化液或一种用于处理 III-V 族元素氧化物的处理液,每种液体都包括一种酸和一种巯基化合物;以及一种使用上述每种液体的方法。此外,还提供了一种用于处理半导体衬底的处理液,包括一种酸和一种巯基化合物,以及一种使用该处理液生产半导体衬底产品的方法。
  • Chemically amplified positive-type photosensitive resin composition, photosensitive dry film, method of manufacturing photosensitive dry film, method of manufacturing patterned resist film, method of manufacturing substrate with template, method of manufacturing plated article, and mercapto compound
    申请人:TOKYO OHKA KOGYO CO., LTD.
    公开号:US11022880B2
    公开(公告)日:2021-06-01
    A chemically amplified positive-type photosensitive resin composition capable of suppressing the occurrence of “footing” in which the width of the bottom (the side proximal to the surface of a support) becomes narrower than that of the top (the side proximal to the surface of a resist layer) in the nonresist portion; and the generation of development residue when a resist pattern serving as a template for a plated article is formed on a metal surface of a substrate using the photosensitive resin composition. A mercapto compound having a specific structure is included in the photosensitive resin composition, and includes an acid generator which generates acid upon exposure to an irradiated active ray or radiation, and a resin whose solubility in alkali increases under the action of acid.
    一种化学放大正型感光树脂组合物,能够抑制非抗蚀部分出现底部(靠近支撑物表面的一面)宽度比顶部(靠近抗蚀层表面的一面)宽度窄的 "起脚 "现象;以及当使用该感光树脂组合物在基底的属表面上形成作为电镀物品模板的抗蚀图案时产生显影残留物。感光树脂组合物中含有一种具有特定结构的巯基化合物,它包括一种在受到照射的活性射线或辐射时产生酸的酸发生器,以及一种在酸的作用下其碱溶解度增加的树脂
  • Removal liquid and method for removing oxide of group III-V element, treatment liquid for treating compound of group III-V element, oxidation prevention liquid for preventing oxidation of group III-V element, treatment liquid for treating semiconductor substrate, and method for producing semiconductor substrate product
    申请人:FUJIFILM Corporation
    公开号:US11145514B2
    公开(公告)日:2021-10-12
    Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a Group III-V element or a treatment liquid for treating an oxide of a Group III-V element, each liquid including an acid and a mercapto compound; and a method using each of the same liquids. Further provided are a treatment liquid for treating a semiconductor substrate, including an acid and a mercapto compound, and a method for producing a semiconductor substrate product using the same.
    本发明提供了一种用于去除 III-V 族元素氧化物的去除液、一种用于防止 III-V 族元素氧化物氧化的防氧化液或一种用于处理 III-V 族元素氧化物的处理液,每种液体都包括一种酸和一种巯基化合物;以及一种使用上述每种液体的方法。此外,还提供了一种用于处理半导体衬底的处理液,包括一种酸和一种巯基化合物,以及一种使用该处理液生产半导体衬底产品的方法。
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