(Oxolan-2-yl)methyl 2-methylbutanoate | 1881965-98-5

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: (Oxolan-2-yl)methyl 2-methylbutanoate
• 英文别名: oxolan-2-ylmethyl 2-methylbutanoate
• CAS: 1881965-98-5
• 化学式: C₁₀H₁₈O₃
• 分子量: 186.25
• InChiKey: IVFCTOQBFINRSN-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.9
• 重原子数：
  13
• 可旋转键数：
  5
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.9
• 拓扑面积：
  35.5
• 氢给体数：
  0
• 氢受体数：
  3

文献信息

• COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND PROCESS FOR PRODUCING THE SAME
  申请人：Yamagishi Takanori

  公开号：US20090306328A1

  公开（公告）日：2009-12-10

  To provide a copolymer for semiconductor lithography employed for forming a resist film as well as thin films such as an anti-reflection film, a gap-filling film, a top coating film, etc. which are formed on or under a resist film, these films being employed in semiconductor lithography, wherein the copolymer has excellent solubility in a solution of a thin film-forming composition and prevents generation of microparticles (e.g., microgel) and pattern defects, and to provide a method for producing the copolymer reliably on an industrial scale. The invention is directed to a copolymer for semiconductor lithography having at least one repeating unit selected from among (A) a repeating unit having a hydroxyl group; (B) a repeating unit having a structure in which a hydroxyl group is protected by a group which inhibits dissolution in an alkaline developer and which dissociates by the action of an acid; (C) a repeating unit having a lactone structure; and (D) a repeating unit having a cyclic ether structure, wherein, when a solution of the copolymer in propylene glycol monomethyl ether acetate having a viscosity of 15 mPa·sec is caused to pass through a filter having a pore size of 0.03 μm under a pressure difference of 0.1 MPa for 60 minutes, the solution exhibits an average flow rate per unit filter area of 200 g/min/m 2 or more, and to a method for producing the copolymer.
• METHOD FOR PRODUCING A COPOLYMER SOLUTION WITH A UNIFORM CONCENTRATION FOR SEMICONDUCTOR LITHOGRAPHY
  申请人：YAMAGISHI Takanori

  公开号：US20100143842A1

  公开（公告）日：2010-06-10

  A method of producing a copolymer solution for semiconductor lithography having a copolymer and a solvent for coating film formation, which copolymer contains at least one repeating unit selected from the group consisting of: a repeating unit (A) having a hydroxyl group; a repeating unit (B) having a structure in which a hydroxyl group is protected by a group which suppresses dissolution into an alkaline developer and which dissociates in the action of an acid; a repeating unit (C) having a lactone structure; and a repeating unit (D) having a cyclic ether structure, the difference in the copolymer concentration among a plurality of containers which were filled with copolymer solution from the same manufacturing lot is not more than a certain range, or the method includes a certain production step.
• PHOTOSENSITIVE COMPOSITION, IMAGE FORMING METHOD, FILM FORMING METHOD, RESIN, IMAGE, AND FILM
  申请人：FUJIFILM CORPORATION

  公开号：US20180162979A1

  公开（公告）日：2018-06-14

  Provided are a photosensitive composition containing a resin which includes a structural unit A represented by Formula (1) or (2) and a structural unit B represented by Formula (3), (4), or (5); and a radically polymerizable monomer, an image forming method, a film forming method, a resin, an image, and a film. R 11 , R 21 , R 31 , R 41 , and R 51 represent H or a hydrocarbon group, R 12 to R 14 and R 22 to R 24 represent a hydrocarbon group, H, or an OH group, R 42 , R 43 , R 52 , and R 53 represent H or a hydrocarbon group, L 1 to L 3 represent a single bond or a linking group, X 1 represents —O— or —NR 15 —, X 2 represent —O— or —NR 25 —, R 15 and R 25 represent H or a hydrocarbon group, and Cy 1 represents a hydrocarbon group which may contain O and has a cyclic structure.
• US7960494B2
  申请人：——

  公开号：US7960494B2

  公开（公告）日：2011-06-14
• US8377625B2
  申请人：——

  公开号：US8377625B2

  公开（公告）日：2013-02-19