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2-[[(Perfluorooctyl)sulfonyl]oxy]-1H-benz[de]isoquinoline-1,3(2H)-dione | 639827-02-4

中文名称
——
中文别名
——
英文名称
2-[[(Perfluorooctyl)sulfonyl]oxy]-1H-benz[de]isoquinoline-1,3(2H)-dione
英文别名
(1,3-dioxobenzo[de]isoquinolin-2-yl) 1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-heptadecafluorooctane-1-sulfonate
2-[[(Perfluorooctyl)sulfonyl]oxy]-1H-benz[de]isoquinoline-1,3(2H)-dione化学式
CAS
639827-02-4
化学式
C20H6F17NO5S
mdl
——
分子量
695.3
InChiKey
JVIAEJHTCBUELU-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    7.7
  • 重原子数:
    44
  • 可旋转键数:
    9
  • 环数:
    3.0
  • sp3杂化的碳原子比例:
    0.4
  • 拓扑面积:
    89.1
  • 氢给体数:
    0
  • 氢受体数:
    22

文献信息

  • PATTERN-FORMING METHOD AND RADIATION-SENSITIVE COMPOSITION
    申请人:JSR CORPORATION
    公开号:US20210181627A1
    公开(公告)日:2021-06-17
    A pattern-forming method includes: applying directly or indirectly on a substrate a radiation-sensitive composition containing a complex and an organic solvent to form a film; exposing the film to an ultraviolet ray, a far ultraviolet ray, an extreme ultraviolet ray, or an electron beam; and developing the film exposed, wherein the complex is represented by formula (1). [M m L n Q p ]  (1) In the formula (1), M represents a zinc atom, a cobalt atom, a nickel atom, a hafnium atom, a zirconium atom, a titanium atom, an iron atom, a chromium atom, a manganese atom, or an indium atom; and L represents a ligand derived from a compound represented by formula (2). R 1 —CHR 3 —R 2 (2) In the formula (2), R 1 and R 2 each independently represent —C(═O)—R A , —C(═O)—OR B , or —CN.
    一种图案形成方法包括:在基板上直接或间接地涂覆含有复合物和有机溶剂的辐射敏感组合物以形成膜;将膜暴露于紫外线、远紫外线、极紫外线或电子束;和显影所暴露的膜,其中该复合物由式(1)表示。[MmLnQp] (1)在式(1)中,M代表原子、原子、原子、原子、原子、原子、原子、原子、原子或原子;L代表来自由式(2)表示的化合物的配体。R1—CHR3—R2(2)在式(2)中,R1和R2分别独立地表示—C(═O)—RA、—C(═O)—ORB或—CN。
  • METHODS FOR FABRICATING HIGH RESOLUTION DNA ARRAY AND ITS APPLICATION IN SEQUENCING
    申请人:Centrillion Technology Holdings Corporation
    公开号:EP3735481A1
    公开(公告)日:2020-11-11
  • POSITIVE WORKING PHOTOSENSITIVE MATERIAL
    申请人:Merck Patent GmbH
    公开号:EP3847506A1
    公开(公告)日:2021-07-14
  • RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND
    申请人:JSR CORPORATION
    公开号:US20220229367A1
    公开(公告)日:2022-07-21
    A radiation-sensitive resin composition includes: a first polymer including a structural unit which includes an acid-labile group; a second polymer including a structural unit represented by formula (1); and a radiation-sensitive acid generator. R 1 represents a monovalent organic group having 1 to 20 carbon atoms; R 2 represents a monovalent organic group having 1 to 20 carbon atoms; X represents a divalent organic group having 1 to 20 carbon atoms; and Y represents a divalent hydrocarbon group having 1 to 20 carbon atoms. The divalent organic group represented by X, the monovalent organic group represented by R 2 , or both has a fluorine atom.
  • [EN] METHODS FOR FABRICATING HIGH RESOLUTION DNA ARRAY AND ITS APPLICATION IN SEQUENCING<br/>[FR] PROCÉDÉS DE FABRICATION D'UNE PUCE À ADN À HAUTE RÉSOLUTION ET UTILISATION DE CELLE-CI DANS LE SÉQUENÇAGE
    申请人:CENTRILLION TECH INC
    公开号:WO2019136322A1
    公开(公告)日:2019-07-11
    The present disclosure provides methods and processes for forming a pattern of oligonucleotides on a microarray. A method for forming a pattern of oligonucleotides on a microarray may include forming a photoresist layer by applying a photoresist composition onto an underlying layer of a substrate, exposing a dose of light through a patterned mask onto the substrate, and removing protective groups on a section of the plurality of functional groups within at least one exposed region of the substrate, wherein the photoresist composition comprises a photoacid generator, an acid scavenger and a photosensitizer, wherein the underlying layer comprises a plurality of functional groups protected by protective groups; thereby forming a pattern on the substrate, wherein the pattern comprises the at least one exposed region, and wherein the at least one exposed region is no more than 1 micrometer in at least one dimension.
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