The present invention provides a composition for forming a silicon-containing resist underlayer film that can form resist patterns excellent in LWR and CDU, and a patterning process using the composition. A composition for forming a silicon-containing resist underlayer film including: a thermosetting silicon-containing material containing any one or more of a partial structure shown by the general formula (Sx-1), (Sx-2), and (Sx-3); and a compound shown by the general formula (P-0), where R1 represents an organic group that has or generates a silanol group, a hydroxy group, or a carboxy group; R2 and R3 are each independently the same as R1 or each represent a hydrogen atom or a monovalent substituent having 1 to 30 carbon atoms; R100 represents a divalent organic group substituted with a fluorine atom; R101 and R102 each independently represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; R103 represents a divalent hydrocarbon group having 1 to 20 carbon atoms; and L104 represents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms.
本发明提供了一种用于形成含
硅抗蚀剂底层薄膜的组合物,该组合物可形成在低温再生和高温分解中性能优异的抗蚀剂图案,还提供了一种使用该组合物的图案化工艺。一种用于形成含
硅抗蚀剂底层薄膜的组合物,包括含有通式(Sx-1)、(Sx-2)和(Sx-3)所示部分结构中的任意一种或多种的热固性含
硅材料;以及通式(P-0)所示化合物,其中 R1 代表具有或产生
硅醇基、羟基或羧基的有机基团;R2 和 R3 各自独立地与 R1 相同,或各自代表氢原子或具有 1 至 30 个碳原子的一价取代基;R100 代表被
氟原子取代的二价有机基团;R101 和 R102 各自独立地代表具有 1 至 20 个碳原子的一价烃基团;R103 代表具有 1 至 20 个碳原子的二价烃基团;以及 L104 代表单键或具有 1 至 20 个碳原子的二价烃基团。