| 1421609-24-6

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• CAS: 1421609-24-6
• 化学式: C₂₄H₅₃NSi₆
• 分子量: 524.205
• InChiKey: YLSRDGYPHVNTLP-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  8.39
• 重原子数：
  31.0
• 可旋转键数：
  9.0
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.75
• 拓扑面积：
  3.24
• 氢给体数：
  0.0
• 氢受体数：
  1.0

反应信息

• 作为反应物：
  描述：

  在 氢气 作用下， 以 正己烷 为溶剂， 20.0 ℃ 、101.33 kPa 条件下， 反应 0.2h， 以25%的产率得到2,6-di(propan-2-yl)-N-trimethylsilyl-N-tris(trimethylsilyl)silylsilylaniline
  参考文献：
  名称：

  从硅（IV）前体到无环二配位甲硅烷基的通用一锅法：甲硅烷基甲硅烷基的合成和结构表征

  摘要：

  视线中的Si：单步单步合成无环甲硅烷基Si {Si（SiMe 3）3 } {N（SiMe 3）Dipp}（Dipp = 2,6- i Pr 2 C 6 H 3）报道了从硅（IV）起始原料中提取的氯乙烯，以及涉及碱金属甲硅烷基类中间体的机理的证据。

  DOI：

  10.1002/anie.201208554
• 作为产物：
  描述：

  、 tris(trimethylsilyl)silyllithium 以 氘代苯 为溶剂， 以65%的产率得到
  参考文献：
  名称：

  从硅（IV）前体到无环二配位甲硅烷基的通用一锅法：甲硅烷基甲硅烷基的合成和结构表征

  摘要：

  视线中的Si：单步单步合成无环甲硅烷基Si {Si（SiMe 3）3 } {N（SiMe 3）Dipp}（Dipp = 2,6- i Pr 2 C 6 H 3）报道了从硅（IV）起始原料中提取的氯乙烯，以及涉及碱金属甲硅烷基类中间体的机理的证据。

  DOI：

  10.1002/anie.201208554

文献信息

• Enabling and Probing Oxidative Addition and Reductive Elimination at a Group 14 Metal Center: Cleavage and Functionalization of E–H Bonds by a Bis(boryl)stannylene
  作者：Andrey V. Protchenko、Joshua I. Bates、Liban M. A. Saleh、Matthew P. Blake、Andrew D. Schwarz、Eugene L. Kolychev、Amber L. Thompson、Cameron Jones、Philip Mountford、Simon Aldridge

  DOI：10.1021/jacs.6b00710

  日期：2016.4.6

  for protic and hydridic E-H bonds (N-H/O-H, Si-H/B-H, respectively). In the case of ammonia (and water, albeit more slowly), E-H oxidative addition can be shown to be followed by reductive elimination to give an N- (or O-)borylated product. Thus, in stoichiometric fashion, redox-based bond cleavage/formation is demonstrated for a single main group metal center at room temperature. From a mechanistic

  通过使用强 σ 供体硼酰基辅助配体，首次实现了 H2 氧化加成到单位点 Sn(II) 系统，生成 (boryl)2SnH2。质子和氢 EH 键（分别为 NH/OH、Si-H/BH）也可以实现类似的化学反应。在氨（和水，虽然速度更慢）的情况下，可以证明 EH 氧化加成之后是还原消除，得到 N-（或 O-）硼化产物。因此，以化学计量方式，室温下单个主族金属中心证明了基于氧化还原的键断裂/形成。从机理上看，
• Reactivity of an Acyclic Silylsilylene toward Ethylene: Migratory Insertion into the Si–Si Bond
  作者：Daniel Wendel、Wolfgang Eisenreich、Christian Jandl、Alexander Pöthig、Bernhard Rieger

  DOI：10.1021/acs.organomet.5b00797

  日期：2016.1.11

  The reaction of the only known room-temperature-stable, acyclic silylsilylene, SiNDipp(SiMe3)}Si(SiMe3)(3)}, toward ethylene was investigated. A full conversion to the silirane product SiCH2-CH2}NDipp(SiMe3)}Si(SiMe3)(3)} (1) was observed at ambient temperature. However, heating of the benzene solution under an ethylene atmosphere led to an exceptional Si-Si bond insertion to give the modified silirane SiCH2-CH2}NDipp(SiMe3)}CH2-CH2-Si(SiMe3)(3)} (2a). With respect to the mechanism, an NMR experiment using C2D4 revealed this reaction to proceed via a migratory insertion of the coordinated ethylene of 1 into the Si Si bond of the ligand framework and subsequent addition of a second ethylene molecule. Moreover, [4+1] cycloaddition with 2,3-dimethyl-1,3-butadiene to give the corresponding silacydopent-3-ene ring SiCH2-CH3C=CCH3-CH2}NDipp(SiMe3)}Si(SiMe3)(3)} (3) is reported. All structures were fully characterized by single-crystal X-ray analysis and H-1, C-13, and Si-29 NMR spectroscopy.
• Reactivity of Boryl- and Silyl-Substituted Carbenoids toward Alkynes: Insertion and Cycloaddition Chemistry
  作者：Andrey V. Protchenko、Matthew P. Blake、Andrew D. Schwarz、Cameron Jones、Philip Mountford、Simon Aldridge

  DOI：10.1021/om501252m

  日期：2015.6.8

  Three modes of reactivity of phenyl-substituted alkynes toward acyclic tetrelenes are reported, with reaction pathways found to be dependent not only on the nature of the group 14 element but also on the supporting ligand set. Systems featuring Sn-B or Ge-B bonds undergo insertion chemistry, forming borane-appended (vinyl)Sn-II and Ge-II species. With a bis(amido)stannylene, phenylacetylene acts as a profit acid, generating a Sn-II acetylide with a unique bridged structure. Reactivity toward a more strongly reducing Si-II system is dominated by the possibility of accessing Si-IV via [2 + 1] cycloaddition chemistry.